W25Q80 Datasheet, PDF (48/61 Pages) Winbond – 8M-BIT, 16M-BIT AND 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q80, W25Q16, W25Q32
11.5 DC Electrical Characteristics
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL CONDITIONS
CIN(1)
Cout⁽¹⁾
VIN = 0V⁽²⁾
VOUT = 0V⁽²⁾
SPEC
MIN
TYP
Input Leakage
ILI
I/O Leakage
ILO
Standby Current
ICC1
/CS = VCC,
VIN = GND or VCC
25
Power-down Current
ICC2
/CS = VCC,
VIN = GND or VCC
1
High performance
current
ICC3
After enable High
Performance mode
50
Current Read Data /
Dual /Quad 1MHz⁽²⁾
ICC4
C = 0.1 VCC / 0.9 VCC
DO = Open
4/5/6
Current Read Data /
Dual /Quad 33MHz⁽²⁾
ICC4
C = 0.1 VCC / 0.9 VCC
DO = Open
6/7/8
Current Read Data /
Dual /Quad 50MHz⁽²⁾
ICC4
C = 0.1 VCC / 0.9 VCC
DO = Open
7/8/9
Current Read Data /
Dual Output Read/Quad ICC4
Output Read 80MHz⁽²⁾
C = 0.1 VCC / 0.9 VCC
DO = Open
10/11/12
Current Write Status
Register
ICC6
/CS = VCC
8
Current Page Program ICC7
/CS = VCC
20
Current Sector/Block
Erase
ICC8
/CS = VCC
20
Current Chip Erase
ICC9
/CS = VCC
20
Input Low Voltage
VIL
–0.5
Input High Voltage
VIH
VCC x 0.7
Output Low Voltage
VOL
IOL = 1.6 mA
Output High Voltage
VOH
IOH = –100 µA
VCC – 0.2
Notes:
1. Tested on sample basis and specified through design and characterization data. TA=25° C, VCC 3V.
2. Checker Board Pattern.
MAX
6
8
±2
±2
50
5
100
6/7.5/9
9/10.5/12
10/12/13.5
15/16.5/18
12
25
25
25
VCC x 0.3
VCC + 0.4
0.4
UNIT
pF
pF
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
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