W29GL128CH9C-TR Datasheet, PDF (38/67 Pages) Winbond – 128M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE

W29GL128C
8.5 AC Characteristics
Description
Valid Data Output after Address
EVIO=VCC
EVIO=1.65V to VCC⁽¹⁾
Page Access Time
EVIO=VCC
EVIO=1.65V to VCC⁽¹⁾
Valid data output after #CE low
EVIO=VCC
EVIO=1.65V to VCC⁽¹⁾
Valid data output after #OE low
EVIO=VCC
EVIO=1.65V to VCC⁽¹⁾
Read Period Time
EVIO=VCC
EVIO=1.65V to VCC⁽¹⁾
Data Output High Impedance after #OE high
Data Output High Impedance after #CE high
Output Hold Time from the earliest rising edge of
address, #CE, #OE
Write Period Time
Command write period time
Address Setup Time
Address Setup Time to #OE low during Toggle Bit
Polling
Address Hold Time
Address Hold Time from #CE or #OE High during
Toggle Bit Polling
Data Setup Time
Data Hold Time
VCC Setup Time
Chip enable Setup Time
Chip enable Hold Time
Output enable Setup Time
Read
Output enable Hold Time
Toggle & Data#
Polling
#WE Setup Time
#WE Hold Time
#CE Pulse Width
#CE Pulse With High
#WE Pulse Width
#WE Pulse Width High
Program/Erase active time by EVIO=VCC
RY/#BY
EVIO=1.65V to VCC
Read Recover Time before Write (#OE High to #WE
Low)
Read Recover Time before Write (#OE High to #CE
Low)
32-Word Write Buffer Program Operation
Effective Write Buffer Program
Operation
Word
Accelerated Effective Write
Buffer Operation
Per Word
Symbol
ALT STD
tACC tAA
tPACC tPA
tCE
tOE
tRC
tDF
tDF
tOH
tWC
tCWC
tAS
tASO
tAH
tAHT
tDS
tDH
tVCS
tCS
tCH
tOES
tOEH
VCC=2.7V~3.6V
Min Typ Max Units
90
ns
100 ns
25
ns
35
ns
90
ns
100 ns
25
ns
35
ns
90
ns
100
ns
20
ns
20
ns
0
ns
90
ns
90
ns
0
ns
15
ns
45
ns
0
ns
30
ns
0
ns
35
µs
0
ns
0
ns
0
ns
0
ns
10
ns
tWS
0
tWH
0
tCP tCEPW 35
tCPH tCEPWH 30
tWP tWEPW 35
tWPH tWEPWH 30
tBUSY
tGHWL 0
ns
ns
ns
ns
ns
ns
90
ns
100 ns
ns
tGHEL 0
ns
tWHWH1
192
µs
tWHWH1
6
µs
tWHWH1
4.8
µs
32