W29GL128CH9C-TR Datasheet, PDF (33/67 Pages) Winbond – 128M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE

W29GL128C
CFI mode: Device Geometry Data Values
Description
Device size = 2ⁿ in number of bytes
Flash device interface description (02=asynchronous
x8/x16)
Maximum number of bytes in buffer write = 2ⁿ (00h, not
support)
Number of erase regions within device (01h:uniform,
02h:boot)
Index for Erase Bank Area 1:
[2E,2D] = # of same-size sectors in region 1-1
[30, 2F] = sector size in multiples of 256K-bytes
Index for Erase Bank Area 2
Index for Erase Bank Area 3
Index for Erase Bank Area 4
Table 7-21 CFI Mode: Device Geometry Data Values
Address
(Word Mode)
27h
28h
29h
2Ah
2Bh
Data
0018h
0002h
0000h
0006h
0000h
Address
(Byte Mode)
4Eh
50h
52h
54h
56h
2Ch
0001h
58h
2Dh
007Fh
5Ah
2Eh
0000h
5Ch
2Fh
0000h
5Eh
30h
0002h
60h
31h
0000h
62h
32h
0000h
64h
33h
0000h
66h
34h
0000h
68h
35h
0000h
6Ah
36h
0000h
6Ch
37h
0000h
6Eh
38h
0000h
70h
39h
0000h
72h
3Ah
0000h
74h
3Bh
0000h
76h
3Ch
0000h
78h
Publication Release Date: August 2, 2013
27
Revision H