W9864G6IH_10 Datasheet, PDF (37/44 Pages) Winbond – 1M × 4BANKS × 16BITS SDRAM

W9864G6IH
11.16 Auto-precharge Timing (Read Cycle)
0
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7
8
9
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(1) CAS Latency=2
( a ) burst length = 1
Command _{Read AP}
Act
tRP
DQ
Q0
( b ) burst length = 2
Command _Read
DQ
AP
Act
tRP
Q0 Q1
( c ) burst length = 4
Command _Read
DQ
AP
Act
tRP
Q0 Q1 Q2 Q3
( d ) burst length = 8
Command
DQ
Read
AP
Act
tRP
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
(2) CAS Latency=3
( a ) burst length = 1
Command
Read
AP
DQ
Act
tRP
Q0
( b ) burst length = 2
Command Read
DQ
AP
Act
tRP
Q0 Q1
( c ) burst length = 4
Command Read
DQ
AP
Act
tRP
Q0 Q1 Q2 Q3
( d ) burst length = 8
Command Read
DQ
AP
Act
tRP
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
Note )
Read
represents the Read with Auto precharge command.
AP
represents the start of internal precharging.
Act
represents the Bank Activate command.
When the Auto precharge command is asserted, the period from Bank Activate command to
the start of internal precgarging must be at least tRAS(min).
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Publication Release Date: Mar. 22, 2010
Revision A11