W39V040A Datasheet, PDF (34/34 Pages) Winbond – 512K × 8 CMOS FLASH MEMORY WITH LPC INTERFACE

W39V040A
15. VERSION HISTORY
VERSION
A1
A2
DATE
October 8, 2002
Dec. 19, 2002
PAGE
-
14
1, 15, 32
15
DESCRIPTION
Initial Issued
Modify PGM mode power supply current (Icc)
parameter from 20 mA (typ.) to 10 mA (typ.)
and 30 mA (max.) to 20 mA (max.)
Modify LPC mode power supply current (Icc)
parameter from 40 mA (typ.) to 12.5 mA (typ.)
and 60 mA (max.) to 20 mA (max.)
Modify CMOS standby current (Isb1) parameter
from 20 µA (typ.) to 5 µA (typ.) and 100 µA (max.)
to 25 µA (max.)
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: [phone]
FAX: [phone]
http://www.winbond.com.tw/
Taipei Office
9F, No.480, Rueiguang Rd.,
Neihu District, Taipei, 114,
Taiwan, R.O.C.
TEL: [phone]
FAX: [phone]
Winbond Electronics Corporation America
2727 North First Street, San Jose,
CA 95134, U.S.A.
TEL: [phone]
FAX: [phone]
Winbond Electronics (Shanghai) Ltd.
27F, 2299 Yan An W. Rd. Shanghai,
200336 China
TEL: [phone]
FAX: [phone]
Winbond Electronics Corporation Japan
7F Daini-ueno BLDG, 3-7-18
Shinyokohama Kohoku-ku,
Yokohama, 222-0033
TEL: [phone]
FAX: [phone]
Winbond Electronics (H.K.) Ltd.
Unit 9-15, 22F, Millennium City,
No. 378 Kwun Tong Rd.,
Kowloon, Hong Kong
TEL: [phone]
FAX: [phone]
Please note that all data and specifications are subject to change without notice.
All the trade marks of products and companies mentioned in this data sheet belong to their respective owners.
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