W9864G2IB Datasheet, PDF (3/42 Pages) Winbond – 512K × 4 BANKS × 32BITS SDRAM

W9864G2IB
1. GENERAL DESCRIPTION
W9864G2IB is a high-speed synchronous dynamic random access memory (SDRAM), organized as
512K words × 4 banks × 32 bits. W9864G2IB delivers a data bandwidth of up to 166M words per
second (-6). For different application, W9864G2IB is sorted into two speed grades: -6 and -7. The -6
parts can run up to 166MHz/CL3. The -7 parts can run up to 143MHz/CL3.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9864G2IB is ideal for main memory in
high performance applications.
2. FEATURES
• 3.3V ± 0.3V for -6 speed grades power supply
• 2. 7V~3.6V for -7 speed grade power supply
• Up to 166 MHz Clock Frequency
• 524,288 words × 4 banks × 32 bits organization
• Self Refresh Mode
• CAS Latency: 2 and 3
• Burst Length: 1, 2, 4, 8 and full page
• Sequential and Interleave Burst
• Burst Read, Single Write Mode
• Byte data controlled by DQM0-3
• Auto-precharge and Controlled Precharge
• 4K Refresh cycles/64mS
• Interface: LVTTL
• Packaged in TFBGA 90 Ball (8X13 mm²), using Lead free materials with RoHS compliant
3. AVAILABLE PART NUMBER
PART NUMBER
W9864G2IB-6
W9864G2IB-7
SPEED
166MHz/CL3
133MHz/CL3
SELF REFRESH
CURRENT (MAX.)
2 mA
2 mA
OPERATING
TEMPERATURE
0°C ~ 70°C
0°C ~ 70°C
Publication Release Date: Sep. 17, 2009
-3-
Revision A01