W9864G2IB Datasheet, PDF (13/42 Pages) Winbond – 512K × 4 BANKS × 32BITS SDRAM

W9864G2IB
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT NOTES
Input, Output Voltage
VIN, VOUT -0.5 ~ VDD + 0.5 (≤ 4.6V max.)
V
1
Power Supply Voltage
VDD, VDDQ
-0.5 ~ 4.6
V
1
Operating Temperature
TOPR
0 ~ 70
°C
1
Storage Temperature
TSTG
-55 ~ 150
°C
1
Soldering Temperature (10s)
TSOLDER
260
°C
1
Power Dissipation
PD
1
W
1
Short Circuit Output Current
IOUT
50
mA
1
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and
reliabilityof the device.
9.2 Recommended DC Operating Conditions
(TA = 0 to 70°C)
PARAMETER
SYM. MIN. TYP. MAX. UNIT NOTES
Power Supply Voltage for -6
VDD
3.0
Power Supply Voltage for -7
VDD
2.7
Power Supply Voltage for -6 (for I/O Buffer) VDDQ
3.0
Power Supply Voltage for -7 (for I/O Buffer) VDDQ
2.7
Input High Voltage
VIH
2.0
Input Low Voltage
VIL
-0.3
Output logic high voltage
VOH
2.4
Output logic low voltage
VOL
-
Input leakage current
II(L)
-10
Output leakage current
Io(L)
-10
3.3
3.6
V
3.3
3.6
V
3.3
3.6
V
3.3
3.6
V
-
VDD + 0.3
V
1
-
0.8
V
2
-
-
V
IOH= -2mA
-
0.4
V
IOL= 2mA
-
10
µA
3
-
10
µA
4
Notes:
1. VIH (max.) = VDD/VDDQ+1.5V for pulse width < 5 nS.
2. VIL (min.) = VSS/VSSQ-1.5V for pulse width < 5 nS.
3. Any input 0V<VIN<VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Output disabled, 0V ≤ VOUT ≤ VDDQ
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Publication Release Date: Sep. 17, 2009
Revision A01