W9864G2IB Datasheet, PDF (14/42 Pages) Winbond – 512K × 4 BANKS × 32BITS SDRAM

W9864G2IB
9.3 Capacitance
(VDD =3V±0.3V for-6, VDD = 2.7V-3.6V for -7, TA = 25 °C, f = 1 MHz)
PARAMETER
Input Capacitance
(A0 to A11, BS0, BS1, CS , RAS , CAS , WE , CKE)
Input Capacitance (CLK)
Input/Output Capacitance (DQ0−DQ31)
Note: These parameters are periodically sampled and not 100% tested
SYM.
Ci
CCLK
Co
MIN.
2.5
2.5
4
MAX.
4
4
6.5
UNIT
pf
pf
pf
9.4 DC Characteristics
(VDD = 3V±0.3V for-6, VDD = 2.7V-3.6V for -7 on TA = 0 to 70°C)
PARAMETER
Operating Current
t_CK = min., t_RC = min.
Active precharge command cycling
without burst operation
Standby Current
tCK = min., CS = V_IH
VI_{H /L} = V_IH (min.) /V_IL (max.)
Bank: inactive state
Standby Current
CLK = V_IL, CS = V_IH
V_IH/L = V_IH (min.) /V_IL (max.)
Bank: inactive state
No Operating Current
t_CK = min., CS = V_IH (min.)
Bank: active state (4 Banks)
Burst Operating Current
(t_CK = min.)
Read/ Write command cycling
Auto Refresh Current
(t_CK = min.)
Auto refresh command cycling
Self Refresh Current
Self refresh mode
(CKE = 0.2V)
1 Bank Operation
CKE = V_IH
CKE = V_IL
(Power Down mode)
CKE = V_IH
CKE = V_IL
(Power Down mode)
CKE = V_IH
CKE = V_IL
(Power Down mode)
SYM.
I_DD1
I_DD2
I_DD2P
I_DD2S
I_DD2PS
I_DD3
I_DD3P
I_DD4
I_DD5
I_DD6
MAX.
-6
-7
UNIT NOTES
100
90
3
35
30
3
2
2
3
15
15
2
2
mA
65
60
15
15
140
130
3, 4
150
140
3
2
2
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Publication Release Date: Sep. 17, 2009
Revision A01