W29C020 Datasheet, PDF (21/21 Pages) Winbond – 256K X 8 CMOS FLASH MEMORY

W29C020
VERSION HISTORY
VERSION
DATE
A1
Apr. 1997
A2
Nov. 1997
A3
Feb. 1998
PAGE
4, 8
9
15
1, 18
6
7
8
1, 18
DESCRIPTION
Initial Issued
Correct the address from 3FFF2 to 7FFF2
Correct the boot block from 8K to 16K
Modify page write cycle timing diagram waveform
Delete cycling 100K item
Add. pause 10 mS
Add. pause 50 mS
Correct the time from 10 mS to 10 µS
Add. cycling 100 item
Headquarters
Winbond Electronics (H.K.) Ltd. Winbond Electronics North America Corp.
No. 4, Creation Rd. III,
Rm. 803, World Trade Square, Tower II, Winbond Memory Lab.
Science-Based Industrial Park,
123 Hoi Bun Rd., Kwun Tong,
Winbond Microelectronics Corp.
Hsinchu, Taiwan
TEL: [phone]
FAX: [phone]
Kowloon, Hong Kong
TEL: [phone]
FAX: [phone]
Winbond Systems Lab.
2727 N. First Street, San Jose,
http://www.winbond.com.tw/
CA 95134, U.S.A.
Voice & Fax-on-demand: 886-2-27197006
TEL: [phone]
FAX: [phone]
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: [phone]
FAX: [phone]
Note: All data and specifications are subject to change without notice.
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Publication Release Date: February 1998
Revision A3