W29C020 Datasheet, PDF (11/21 Pages) Winbond – 256K X 8 CMOS FLASH MEMORY

W29C020
Power-up Timing
PARAMETER
Power-up to Read Operation
Power-up to Write Operation
SYMBOL
TPU. READ
TPU. WRITE
TYPICAL
100
5
UNIT
µS
mS
CAPACITANCE
(VDD = 5.0V, TA = 25° C, f = 1 MHz)
PARAMETER
DQ Pin Capacitance
Input Pin Capacitance
SYMBOL
CDQ
CIN
CONDITIONS
VDQ = 0V
VIN = 0V
MAX.
12
6
UNIT
pF
pF
AC CHARACTERISTICS
AC Test Conditions
(VDD = 5.0V ±10% for 90 nS and 120 nS; VDD = 5.0V ±5% for 70 nS)
PARAMETER
CONDITIONS
Input Pulse Levels
0V to 3V
Input Rise/Fall Time
<5 nS
Input/Output Timing Level
1.5V/1.5V
Output Load
1 TTL Gate and CL = 100 pF for 90/120 nS
CL = 30 pF for 70 nS
AC Test Load and Waveform
+5V
D _OUT
100 pF for 90/120 nS
30 pF for 70 nS
(Including Jig and Scope)
1.8K_Ω
1.3K_Ω
Input
3V
0V
Output
1.5V 1.5V
Test Point
Test Point
- 11 -
Publication Release Date: February 1998
Revision A3