W29C020 Datasheet, PDF (12/21 Pages) Winbond – 256K X 8 CMOS FLASH MEMORY

W29C020
AC Characteristics, continued
Read Cycle Timing Parameters
(VDD = 5.0V ±10% for 90 nS and 120 nS; VDD = 5.0V ±5% for 70 nS, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM. W29C020-70 W29C020-90
MIN. MAX. MIN. MAX.
W29C020-12
MIN. MAX.
UNIT
Read Cycle Time
TRC
70
-
90
- 120 -
nS
Chip Enable Access Time
TCE
-
70
-
90
- 120 nS
Address Access Time
TAA
-
70
-
90
- 120 nS
Output Enable Access Time
TOE
-
35
-
40
-
50 nS
CE High to High-Z Output
TCHZ
-
25
-
25
-
30 nS
OE High to High-Z Output
TOHZ
-
25
-
25
-
30 nS
Output Hold from Address change TOH
0
-
0
-
0
-
nS
Byte/Page-write Cycle Timing Parameters
PARAMETER
SYMBOL
Write Cycle (erase and program)
TWC
Address Setup Time
TAS
Address Hold Time
TAH
WE and CE Setup Time
TCS
WE and CE Hold Time
TCH
OE High Setup Time
TOES
OE High Hold Time
TOEH
CE Pulse Width
TCP
WE Pulse Width
TWP
WE High Width
TWPH
Data Setup Time
TDS
Data Hold Time
TDH
Byte Load Cycle Time
TBLC
MIN.
-
0
50
0
0
0
0
70
70
100
50
0
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
Note: All AC timing signals observe the following guideline for determining setup and hold times:
Reference level is VIH for high-level signal and VIL for low-level signal.
MAX.
10
-
-
-
-
-
-
-
-
-
-
-
150
UNIT
mS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
µS
- 12 -