W24L010A Datasheet, PDF (2/9 Pages) Winbond – 128K X 8 High Speed CMOS Static RAM

W24L010A
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Supply Voltage to VSS Potential
Input/Output to VSS Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
RATING
-0.5 to +4.6
-0.5 to VDD +0.5
1.0
-65 to +150
0 to +70
UNIT
V
V
W
°C
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
TRUTH TABLE
CS1 ^CS2 OE WE
H
X
X
X
X
L
X
X
L
H
H
H
L
H
L
H
L
H
X
L
MODE
Not Selected
Not Selected
Output Disable
Read
Write
I/O1−I/O8
High Z
High Z
High Z
Data Out
Data In
VDD CURRENT
ISB, ISB1
ISB, ISB1
IDD
IDD
IDD
OPERATING CHARACTERISTICS
(VDD = 3.3V ±5%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
Input Low Voltage
VIL
-
Input High Voltage
VIH
-
Input Leakage Current ILI
VIN = VSS to VDD
Output Leakage
Current
Output Low Voltage
VI/O = VSS to VDD
ILO
CS1 = VIH or CS2 = VIL
or OE = VIH or WE = VIL
VOL IOL = +8.0 mA
Output High Voltage
VOH IOH = -4.0 mA
Operating Power
CS1 = VIL,
10
Supply Current
IDD _{CS2 = VIH}
12
I/O = 0 mA
Cycle = MIN
15
Duty = 100%
Standby Power
Supply Current
ISB
CS1 = VIH, or CS2 = VIL
ISB1 _{CS1 ≥ VDD -0.2V or}
CS2 ≤ 0.2V
Note: Typical characteristics are at VDD = 3.3V, TA = 25° C.
MIN.
-0.5
+2.0
-10
TYP.
-
-
-
MAX.
+0.8
VDD +0.5
+10
UNIT
V
V
µA
-10
-
+10
µA
-
-
2.4
-
-
-
-
-
-
-
-
-
-
-
0.4
V
-
V
130
mA
120
mA
100
mA
15
mA
5
mA
-2-