W9812G6JB Datasheet, PDF (13/42 Pages) Winbond – 2M x 4 BANKS 꼌 16 BITS SDRAM

W9812G6JB
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT NOTES
Voltage on any pin relative to VSS VIN, VOUT
-0.5 ~ VDD + 0.5 ( 4.6V max.)
V
1
Voltage on VDD/VDDQ supply
relative to VSS
VDD, VDDQ
-0.5 ~ 4.6
V
1
Operating Temperature for -6/-75
TOPR
0 ~ 70
°C
1
Operating Temperature for -6I/75I
TOPR
-40 ~ 85
°C
1
Storage Temperature
TSTG
-55 ~ 150
°C
1
Soldering Temperature (10s)
TSOLDER
260
°C
1
Power Dissipation
PD
1
W
1
Short Circuit Output Current
IOUT
50
mA
1
Note 1: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and
reliability of the device.
9.2 Recommended DC Operating Conditions
(TA = 0 to 70°C for -6/-75, TA= -40 to 85°C for -6I/75I)
PARAMETER
SYM. MIN.
Power Supply Voltage
Power Supply Voltage (for I/O Buffer)
Input High Voltage
Input Low Voltage
VDD
3.0
VDDQ
3.0
VIH
2.0
VIL
-0.3
Note 2: VIH(max) = VDD/ VDDQ+1.5V for pulse width < 5 nS
VIL(min) = VSS/ VSSQ-1.5V for pulse width < 5 nS
TYP.
3.3
3.3
-
-
MAX.
3.6
3.6
VDD + 0.3
0.8
UNIT
V
V
V
V
NOTES
2
2
2
2
9.3 Capacitance
(VDD = 3.3V ± 0.3V, f = 1 MHz, TA = 25°C)
PARAMETER
Input Capacitance
(A0 to A11, BS0, BS1, CS , RAS , CAS , WE , DQM, CKE)
Input Capacitance (CLK)
Input/Output capacitance (DQ0DQ15)
Note: These parameters are periodically sampled and not 100% tested.
SYM.
CI
CCLK
CIO
MIN.
-
-
-
MAX.
3.8
3.5
6.5
UNIT
pf
pf
pf
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Publication Release Date: Oct. 15, 2013
Revision A02