W49L201 Datasheet, PDF (13/23 Pages) Winbond – 256K X 8 CMOS FLASH MEMORY

W49L201
Power-up Timing
PARAMETER
Power-up to Read Operation
Power-up to Write Operation
SYMBOL
TPU. READ
TPU. WRITE
TYPICAL
200
10
CAPACITANCE
(VDD = 3.3V, TA = 25° C, f = 1 MHz)
PARAMETER
I/O Pin Capacitance
Input Capacitance
SYMBOL
CI/O
CIN
CONDITIONS
VI/O = 0V
VIN = 0V
MAX.
12
6
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
Input Pulse Levels
Input Rise/Fall Time
Input/Output Timing Level
Output Load
CONDITIONS
0.4V to 2.4V
< 5 nS
1.5V/1.5V
1 TTL Gate and CL = 30 pF for 70 nS
CL = 100 pF for 90 nS
AC Test Load and Waveform
+3.3V
UNIT
µS
mS
UNIT
pf
pf
D _OUT
30 pF for 70 nS
100 pF for 90 nS
(Including Jig and Scope)
1.8K Ω
1.3K Ω
Input
2.4V
0.4V
1.5V
Test Point
Output
1.5V
Test Point
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Publication Release Date: May 2000
Revision A1