W49L201 Datasheet, PDF (1/23 Pages) Winbond – 256K X 8 CMOS FLASH MEMORY

Preliminary W49L201
128K × 16 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K × 16 bits. The
device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is
not required. The unique cell architecture of the W49L201 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 3.3-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
• Single 3.3-volt operations:
− 3.3-volt Read/Erase/Program
• Fast Program operation:
− Word-by-Word programming: 50 µS (max.)
• Fast Erase operation: 100 mS (typ.)
• Fast Read access time: 70/90 nS
• Endurance: 10K cycles (typ.)
• Ten-year data retention
• Hardware data protection
• Sector configuration
− One 8K words Boot Block with lockout
protection
− Two 8K words Parameter Blocks
− One 104K words (208K bytes) Main Memory
Array Blocks
• Low power consumption
− Active current: 15 mA (typ.)
− Standby current: 10 µA (typ.)
• Automatic program and erase timing with
internal VPP generation
• End of program or erase detection
− Toggle bit
− Data polling
• Latched address and data
• TTL compatible I/O
• JEDEC standard word-wide pinouts
• Available packages: 44-pin SOP, 48-pin TSOP
Publication Release Date: May 2000
-1-
Revision A1