MMBTH10LT1 Datasheet, PDF (5/5 Pages) Motorola, Inc – VHF/UHF Transistor

WILLAS
FM120-M+
MMBTH10LT^T1^HRU
1.0A SUR^VFA^HC^FE M^/UOU^HNT^FSC^THO^rT^aTⁿKY^sBⁱA^sRR^toIER^rsRECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipatiSonOoffTer-s23
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage dr^.o¹p². ^2(3.10)
• High surge capability.
• Guardring for overvoltage protection.
.106(2.70)
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, _.s₀o₈ld₀e₍r₂a_.b₀le₄p₎ er MIL-STD-750
Method 2026 _.070(1.78)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.008(0.20)
0.031(0.8) Typ.
.003(0.08)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient te_.m₀p₀e₄ra₍t₀ur_.e₁u₀n₎l_Mes_As _Xot_.herwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
.020(0¹.²50) ¹³
14
15
16
VRRM
20
30
40
50
60
VRM^.S⁰¹²⁽⁰1^.4³⁰⁾ 21
28
35
42
18
10
115 120
80
100
150
200 Volts
56
70
105
140 ^Volts
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
IO
1.0
Amps
Dimensions in inches and (millimeters)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
RΘJA
00..09357_CJ
TJ
Storage Temperature Range
TSTG
-55 to +125
0.037
0.95
30
40
120
- 65 to +175
-55 to +150
Amps
℃/W
PF
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-M_0.H₀₇F₉M150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50 2.0
0.70
0.85
0.9
0.92 Volts
Maximum Average Reverse Current at
Rated DC Blocking Voltage
@T
@T
A=25℃
A=125℃
0.035
IR
0.9
0.5
mAmps
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.031
0.8
inches
mm
2012-11
WILLAS ELECTRONIC CORP.