MMBTH10LT1 Datasheet, PDF (2/5 Pages) Motorola, Inc – VHF/UHF Transistor

WILLAS
FM120-M+
MMBTH10LT^T1^HRU
1.0A SU^VRF^HAC^FE M^/UOU^HNT^FSC^TH^rO^aTTⁿKY^sBⁱA^sR^tR^oIE^rR^sRECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
EoLpEtimCTizReIbCoAaLrdCsHpaAcReA. CTERISTICS (T _A = 25°C unless otherwise noted) (Continued)
SOD-123H
• Low power loss, high efCfichiaernacctye.ristic
Symbol
Min
Typ ^0.146(3.M⁷⁾ ax
Unit
0.130(3.3)
• _OH_Nigh_Cc_Hu_Arr_Ren_At_Cca_Tp_Ea_Rb_Ii_Slit_Ty_I,_Clo_Sw forward voltage drop.
0.012(0.3) Typ.
• High su_Dr_Cge_Cc_ua_rrp_ea_nb_t i_Gli_aty_in.
• Guardr₍i_In_Cg₌fo₄r_.0o_mve_Ar_dv_co_,lt_Vag_CEe₌p₁ro₀t_Ve_dc_cti₎on.
• Ultra hi_Cg_oh_l-_les_cp_te_ore_–d_Es_mw_iti_tt_ec_rh_Sin_ag_tu._{ration Voltage}
• Silicon epitaxial planar chip, metal silicon junction.
•
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e
a
d
-
f
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=
p
a^4.r⁰ts^mm^Ade^ce^,t^Ie^Bn⁼v⁰ir^.o⁴n^mm^Ae^dn^ct⁾a
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standards
of
MIL-ST^BD^a-^s1^e9^–5^E0^m0^itt/^e2^r2^O8^{n Voltage}
• RoHS p(rIoCd=uc4t.0fomr Apadck, iVngCEc=od1e0Vsudfcfi)x "G"
h_FE
V_CE(sat)
V _BE
60
—
—
-
0.071(1.8)
0.056(1.4)
—
—
0.5
Vdc
—
—
0.95
Vdc
M^SHMe^alc^AogLh^eLna^–frn^SeIei^Gc^pNra^oAdl^Lud^cCt a^fHot^rAa^{pRacAkCinTgEcoRdIeSTsuICffiSx "H"}
Current Gain–Bandwidth Product
• Epoxy :_(VU_CL_E9₌4-₁V₀0_Vr_da_ct_,e_Id_Cf₌la₄m_.0e_mr_Ae_dta_cr_,d_f a₌n₁t_00MHz)
f_T
• Case : _CM_oo_lll_ed_ce_tod_rp_–l_Ba_as_sti_ec,_CS_aO_paD_c-_it1_a2_n3_ceH
•
Termin(aVls_C:_BP=la1t0edVdtec,rmI _Ein=a0l,s,fs=o1ld.0erMaHblze)
per
C cb,
MIL-STD-750
650
—
0.031(0.8) Typ.
—
—
0.040(1.0)
—
0M.0H24z(0.6)
0.031(0.8) Typ.
0.7
pF
ColleMcteotrh–oBda2se02F6eedback Capacitance
• Polarity^(V: ICnBd⁼ic¹a⁰te^Vd^dcb^,y^I cE a⁼t⁰h^,od^f e⁼ b^1.a⁰n^Md ^Hz)
C rb
—
—
0.65
pF
Dimensions in inches and (millimeters)
• Mounti^Cng^olP^leo^cts^oi^rtio^Bn^as: ^eA^Tnⁱy^{me Constant}
( I C = 4.0mAdc,V CB=10 Vdc, f = 31.8 MHz)
rb’ C C
—
—
9.0
ps
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
13
14
15
16
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
18
10
115 120
80
100
150
200 Volts
56
70
105
140 ^Volts
VDC
20
30
40
50
60
80
100
150
200 ^Volts
IO
1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
Amps
℃/W
PF
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
0.5
mAmp
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.