MMBTH10LT1 Datasheet, PDF (4/5 Pages) Motorola, Inc – VHF/UHF Transistor

WILLAS
FM120-M+
MMBTH10LT^T1^HRU
1.0A SU^VRF^HAC^FE ^/M^UOU^HNT^FSC^TH^rO^aTTⁿKY^sBⁱA^sR^tR^oIE^rR^sRECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
•
Low profile surface mounted
optimize board space.
application
in
o_Trd_Ye_Pr t_Io_CAL
CHARACTERISTICS
SOD-123H
• Low power loss, high efficiency.
• High current capability, low forward volt_Ca_Og_Me_Md_Oro_Np_–._{BASE y PARAMETERS versus FREQUENCY}
• High surge capability.
(V CB = 10 Vdc, I C = 4.0 mAdc, T A = 25°C)
• Guardring for overvoltage protection.
y rb , REVERSE TRANSFER ADMITTANCE
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-fre5.e0 parts meet environmental standards of
0
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
100
• RoHS product for packing code suffix "G"
Halogen⁴f^.0ree product for packing code suffix "HM"PS H11
–1.0
200
Mechanical data
3.0
• Epoxy : UL94-V0 rated flame retardant
–b rb
• Case : M_2.o₀ lded plastic, SOD-123H
–b rb
,
• Terminals :Plated terminals, solderable per MIL-STD-750
1.0 ^{Method 2026}
MPS H1
–2.0
–3.0 0.031(0.8) Typ.
–4.0
400
700
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
–g rb
• Mounting0 Position : Any
• Weight : A¹p⁰⁰proximated 0.²0⁰1⁰1 gra³⁰m^{0 400 500}
700
1000
Dimensions in inches and (millimeters)
1000MHz
–5.0
2.0 1.8 1.2 0.8 0.4 0 0.4 0.8 1.2
1.6 2.0
f, FREQUENCY (MHz)
g rb (mmhos)
MAXIMUM _FR_iA_guT_rI_eN₅G_. S_ReA_cN_taD_ngE_uL_laE_rC_FT_oR_rmICAL CHARACTERISTICS _{Figure 6. Polar Form}
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
y ob , OUTPUT ADMITTANCE
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurren₁t₀Peak Reverse Voltage
Maximum RMS Vo₉lt_.0age
Maximum DC Bloc₈k_.i₀ng Voltage
VRRM
20
30
4₁0₀
50
60
VRMS
14
21
28
35 ^1000M4^H2^z
VDC
20
30
4₈0_.0
50
60
80
100
56
70
80
100
150
200 Volts
105
140 ^Volts
150
200 ^Volts
Maximum Average7.F0orward Rectified Current
IO
700
1.0
Amps
6.0
Peak Forward
superimposed
Surge Current 8.3 ms single half
on ra⁵te^.0d load (JEDEC method)
sine-wave
b
IFSM
ob
Typical Thermal Re^4.s⁰istance (Note 2)
RΘJA
Typical Junction C³a^.p⁰acitance (Note 1)
CJ
Operating Tempera^2.t⁰ure Range
Storage Temperatu^1.r⁰e Range
TJ
TSTG ^{g ob}
6.0
4.0
400
200
-55 to +125 2.0
100
30
40
120
- 65 to +175
-55 to +150
Amps
℃/W
PF
℃
℃
0
C¹H⁰⁰ARACTERISTIC²S⁰⁰
0
300 40_S0_YM5_B0_O0_{L FM1}7₂0₀0_{-MH FM}10₁0₃0_{0-MH FM140-M}0 _{H FM150-M}2_H.0 _FM160-M4_H.0_FM180-MH6_F.0_M1100-MH8_F.0_M1150-MH1_F0_{M1200-MH UNIT}
Maximum Forward Voltage at 1.0A DC _{f , FREQUENCY (}V_MF_Hz)
0.50
Maximum Average Reverse Curren_Ft_igat_ur@_e T₇A_.=_R2_e5℃_{ctangulIaRr Form}
Rated DC Blocking Voltage
@T A=125℃
0.70
g ob (mmh⁰o^.8s⁵)
0.9
Fig⁰u^.5re 8. Polar Form
10
0.92 Volts
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.