MMBTH10LT1 Datasheet, PDF (1/5 Pages) Motorola, Inc – VHF/UHF Transistor

WILLAS
FM120-M+
MMBTH10LT^T1^HRU
1.0A SU^VRF^HAC^FE ^/M^UOU^HNT^FSC^TH^rO^aTTⁿKY^sBⁱA^sR^tR^oIE^rR^sRECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
z^beW^tte^erd^re^ec^vla^er^re^seth^la^et^at^kh^ae^gm^e a^ct^ue^rr^ri^eaⁿl o^t f^apⁿr^do^td^hu^ec^rt^{mcaolmrepsliiasntacencwei.th RoHS requirements.}
• Lo_Pw_b-p_Fr_ro_efi_ele_ps_au_cr_kfa_ac_ge_em_isou_an_vt_ae_id_laa_bp_lp_elication in order to
op_Rt_oim_Hi_Sze_pb_roo_da_urd_ctsp_foa_rc_pe_a. _{cking code suffix ”G”}
• Low power loss, high efficiency.
• H^Hig^ah^loc^gu^errⁿen^frt^ec^eap^pa^rob^dil^uit^cy^t, l^fo^ow^{r p}fo^ar^cw^kaⁱⁿr^gd ^cv^oo^dlta^eg^se^ud^ffr^ixop^“H. ^”
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• H_Oig_rh_ds_eur_rg_ie_nc_gap_Inab_fi_olit_ry_m. _ation
• Guardring for overvoltage protection.
• Ultra hig^Dh^e-^vs^icp^eeed switchin^Mg^a.^rking
Shipping
• Sil_Mico_Mn_Be_Tp_Hi₁ta₀x_Li_Ta₁l planar ch₃ip_E,_Mmetal silicon₃j₀u₀n₀c_/Tti_ao_pn_e._&Reel
• Lead-free parts meet environmental standards of
M_MA_ILX_-I_SM_TU_DM_-19R₅A₀T₀I_/N₂G₂₈S
• RoHS product for packing code suffix "G"
Halogen f^Rre^ae^tipⁿr^goduct for packing co^Sd^ye^ms^buf^ofi^lx "H" ^Value
Unit
0.071(1.8)
0.056(1.4)
Me_Cc_oh_llea_ctn_or–i_Ec_ma_itl_ted_{r V}a_olt_aa_ge
V _CEO
25
Vdc
•
Ep_Cox_oy_lle:_cU_toL_r–9_B4_a-V_se0 _Vra_ot_lte_ad_geflame
r
e
t
a
r_Vd
ant
CBO
30
Vdc
• Ca_Ese_m:_ittM_ero_–l_Bd_ae_sd_ep_Vla_ols_tati_gc_e, SOD-123H_{V EBO}
3.0
Vdc
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
SOT–23
0.040(1.0)
0.024(0.6)
3
C0O.0L3L1(E0C.8T) OTyRp.
THERMAL^MC^eH^thA^oR^dA²C⁰²T⁶ERISTICS
• Pol_Ca_hri_aty_ra:_cI_tn_ed_rii_sc_ta_icted by cathode band
Symbol
Max
1
BASE
U^Dn^imit^{ensions in inches and (millimeters)}
• Mo_Tu_on_tt_ain_{l D}g_eP_vo_ics_eit_Dio_isn_si:_pA_an_tioy_{n FR– 5 Board, (1)}
• We_Tig_Ah₌t ₂: ₅A_°p_Cproximated 0.011 gram
P_D
225
mW
Derate above 25°C
1.8
mW/°C
The^Mrm^Aal^XR^Ie^Msi^Usta^Mnc^Re,^AJu^Tn^Ic^Ntio^Gn^Sto^AA^Nmb^Die^Ent^LECTRICAR^L_θJ^C_A ^HARACT5^E56^RISTICS°C/W
Ratings at 25_T℃ _otala_Dm_eb_vi_ie_cent_Dte_ism_sip_pe_ar_tia_ot_nure unless otherwise specified.
Single phase_Ah_lua_mlf_inw_aa_Sve_u,_b6_s0_trH_atz_e,_,r₍e₂s₎is_Tt_Aiv₌e₂o₅f_°i_Cnductive load.
P_D
For capacitiv_De_el_ro_aa_ted,_ad_be_or_va_ete₂c₅u_°Crrent by 20%
300
mW
2.4
mW/°C
2
EMITTER
Thermal R_Re_As_Tis_It_Nan_Gc_Se, Junction to Ambien_St _{YMBOL FM120}R_{-MθJAH FM130-MH FM}41₁7_{40-MH FM15}°₀C_-M/W_{H FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT}
Marking Code^{Junction and Storage Temperature}
1^T2J ^{, T}stg 13 ^{–55 to}1⁺4¹⁵⁰ 15 ^°C 16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Volts
Maximum_DR_EM_VS_ICVo_Elta_Mge_ARKING
VRMS
14
21
28
Maximum DC Blocking Voltage
MMBTH10LT1= 3EM
Maximum Average Forward Rectified Current
VDC
20
30
40
IO
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
superimposed on rated load (J^CE^hD^aE^rC^acm^tee^rth^iso^td^ic)
Symbol
Min
35
42
56
70
50
60
80
100
1.0
30
Typ
Max
Unit
105
140 ^Volts
150
200 ^Volts
Amps
Amps
Typical Th_Oe_Frm_Fal_CR_Hes_Ais_Rta_Anc_Ce_T(N_Eo_Rte_IS2)_TICS
RΘJA
40
℃/W
Typical Junction Capacitance (Note 1)
CJ
120
PF
Operating Tem^Cp^oe^llera^ct^tu^or^re^–ER^man^itg^te^{er Breakdown Voltage}
TJ
V _(BR)-_C5_EO5 to +125 25
—
—
-V5d5cto +150
℃
Storage Temp^(Ie^Cra⁼tu¹re^.0R^ma^Ang^de^{c, I B= 0 )}
TSTG
- 65 to +175
℃
Collector–Base Breakdown Voltage
(I _C = 1_C00_HAµ_RA_Adc_CT, _EI _ER=_IS0_T)_ICS
V _(BR)CBO
30
—
—
Vdc
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum For^Ew^marⁱd^tteV^ro^–l^Bta^ag^se^ea^Bt ^r1^e.0^aA^kdD^oC^{wn Voltage}
VF
Maximum Ave^(IraEg⁼e¹R⁰e^µve^Ar^ds^ce ^,C^IuCr⁼re⁰n⁾t at @T A=25℃
Rated DC Blo^Cck^oi^ln^leg^cV^too^rlt^Cag^ue^{toff Current} @T A=125℃
IR
( V _CB = 25Vdc , I _E = 0 )
V _(BR)EBO
0.50 3.0
I _CBO
—
0^—.70
—
0.5
—
10₁₀₀
0.V8d5c
nAdc
0.9
0.92 Volts
mAmp
NOTES:
Collector Cutoff Current
1- Measured at₍1_VM_CH_B Z₌a₃n₀d_Va_dp_cpl_,ie_Id_Er₌ev₀er₎se voltage of 4.0 VDC.
I
CBO
—
—
100
uAdc
2- Thermal Re_Esis_mta_itn_tece_{r C}Fr_uo_tm_ofJ_f u_Cn_uc_rti_ro_en_nt_to Ambient
( V _EB = 2.0Vdc , I _C= 0 )
I _EBO
—
—
100
nAdc
Emitter Cutoff Current
( V = 3.0Vdc , I = 0 )
I _EBO
—
—
10
uAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2012-²0^. 6^{Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.}
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.