MMBTH10LT1 Datasheet, PDF (3/5 Pages) Motorola, Inc – VHF/UHF Transistor

WILLAS
FM120-M+
MMBTH10LT^T1^HRU
1.0A SU^VRF^HAC^FE ^/M^UOU^HNT^FSC^TH^rO^aTTⁿKY^sBⁱA^sR^tR^oIE^rR^sRECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted
optimize board space.
application_Tin_Yo_Prd_ICer_Ato_L
CHARACTERISTICS
SOD-123H
• Low power loss, high efficiency.
0.146(3.7)
• High current capability, low for^Cw^Oar^Md^Mvo^Olt^Na^–g^Be ^Adr^So^Ep.^{y PARAMETERS versus FREQUENCY 0.130(3.3)}
• High surge capability.
(V CB = 10 Vdc, I C = 4.0 mAdc, T A = 25°C)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
yib , INPUT ADMITTANCE
• Silicon epitaxial planar chip, metal silicon junction.
80
• Lead-free parts meet environmental standards of
0
MIL-S7T0D-19500 /228
g ib
• RoHS product for packing code suffix "G"
Haloge⁶n⁰ free product for packing code suffix "H"
Mech50anical data
–b ib
• Epoxy₄:₀UL94-V0 rated flame retardant
–10
–20
1000MHz
–30
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case :₃M₀ olded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
20
Method 2026
•
10
Polarity
:
Indicated
by
cathode
band
0.031(0.8) Typ.
–40
700
0.031(0.8) Typ.
400
200 100
–50
Dimensions in inches and (millimeters)
• Mountin⁰ g Position : Any
100
200
300 400 500
700
1000
–60
0
10
20
30
40
50
60
70
80
• Weight : Approximated _f0_, ._F0_R1_E1_Qg_Ura_Em_{NCY (MHz)}
g ib (mmhos)
MAXIMUM^FiR^gA^urT^eIN^1.G^RS^ecA^taNⁿD^guE^laL^rE^FC^oT^rmRICAL CHARACTERISTICS ^{Figure 2. Polar Form}
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive lo_yad_fb. _{, FORWARD TRANSFER ADMITTANCE}
For capacitive load, derate current by 20%
RATINGS
70
Marking Code
Maximum Recurre⁶n⁰t Peak Reverse Voltage
50
Maximum RMS Voltage
40
Maximum DC Blocking Voltage
30
–g fb
Maximum Average Forward Rectified Current
20
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
b fb
12
VRRM
20
13
60₁₄
30
40
15
16
18
50200
60⁴⁰⁰
80
10
100
115 120
150
200 Volts
VRMS
14
VDC
20
IO
21
50₂₈
35
100
30
40
50
40
42
60
1.0
56 600 70
80
70¹0⁰⁰
105
140 ^Volts
150
200 ^Volts
Amp
Peak Forward Surg1e0Current 8.3 ms single half sine-wave
superimposed on rat0ed load (JEDEC method)
IFSM
Typical Thermal R–1e0sistance (Note 2)
RΘJA
Typical Junction _–C₂a₀pacitance (Note 1)
Operating Tempe_–r₃a₀ture Range
Storage Temperatu₁r₀e₀Range
200
CJ
TJ
300 400 ^TS50^T0^G 700
30
30
1000MHz
20
40
120
-55 to +125
-55 to +150
1000
10
70 60 50
40 ^{- 65}30^{to +1}20⁷⁵ 10
0
10 20 30
Amp
℃/W
PF
℃
℃
CHARACTERIST^fI^,C^FS^{REQUENCY (M}SY^HM^zB⁾ OL FM120-MH FM130-MH FM140-MH FM150-MH FM160^g-M^fH^{b (}F^mM^m18^h0^o-M^s)H FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.F0AigDuCre 3. RectangulaVr FForm
0.50
0.7^F0^{igure 4. Polar}0^F.8^o5^rm
0.9
0.92 Volts
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mAmp
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.