MMBT5551WT1 Datasheet, PDF (5/5 Pages) WILLAS ELECTRONIC CORP – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

WILLAS
FM120-M+
MMBT5551WT^T1^HRU
1.0ADSUUARLFANCPENMSOMUANLTLSSCIHGONTATLKYSUBARRFRAICEER RECTIFIERS -20V- 200V
FM1200-M+
MOUNT TRANSISTOR
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
SOT-323
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon jun^.0c⁸tio⁷n⁽². ^.20)
• Lead-free parts meet environmental standar_.d₀s₇o₀f_(1.80)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
• Mounting Position : Any
.056(1.40)
• Weight : Approximated 0.011 gram
.047(1.20)
Dimen_.0sio₁n₀s₍in₀i_.n₂ch₅e₎s and (millimeters)
.003(0.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
RATIN_.G₀₀S_4(0.10)MAX.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^Volts
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
VDC
20
30
40
50
60
80
100
150
200 ^Volts
.016(0.40)
IO
1.0
Amps
.008(0.20)
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
30
Amps
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/W
Typical Junction Capacitance (Note 1)
Dim_Ce_J nsions in inches and (millimeters) 120
PF
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.025^SYMBOL
0.65 ^VF
FM120-MH FM130-MH FM140-M^0.H⁰²F⁵M150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.50 ^0.65
0.70
0.85
0.9
0.92
UNIT
Volts
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mAmp
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.035
0.9
0.028
0.7
0.075
1.9
inches
mm
201²2⁰-1¹1^2-06
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