MMBT5551WT1 Datasheet, PDF (1/5 Pages) WILLAS ELECTRONIC CORP – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

WILLAS
FM120-M+
MMBT5551WT^T1^HRU
1.0ADSUUARLFANCPENMSOMUANLTLSSCIHGONTATLKYSUBARRFRAICEER RECTIFIERS -20V- 200V
FM1200-M+
MOUNT TRANSISTOR
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•_FL_Eo_Aw_Tp_Ur_Rof_Eile surface mounted application in order to
optimize board space.
•^ƽLWowe pdoewclearrelotshsa,ththigehmefaftiecireianlcoyf. product compliance with RoHS requirements.
• H^Pig^bh^-Fc^ru^er^ere^pn^at^cc^ka^ap^ga^eb^isili^aty^v,^alⁱo^law^bf^lo^erward voltage drop.
• H^Rig^oh^Hs^Su^prg^roe^dc^ua^ctp^fa^ob^r i^pli^aty^c.^{king code suffix ”G”}
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• GHuaalrodgreinngfrfeoer porvoedruvcotlftoargpeapckrointgecctoioden.suffix “H”
•DUElVtrIaChEigMhA-sRpeKeINd GswAitNchDinOg.RDERING INFORMATION
• Silicon_De_evp_ii_cta_exial planar ch_Mip_a,_rm_kine_gtal silicon ju_Sn_hc_it_pio_pn_in. _g
• Lead-free parts meet environmental standards of
M_MI L_M- S_BT D₅₅-₅1₁9_W5 0_T0₁ / 2 2 8
G1
3000/Tape&Reel
• RoHS product for packing code suffix "G"
M_HA_alX_ogIM_enU_fM_reeR_pA_rT_odIN_ucG_t S_{for packing code suffix "H"}
0.071(1.8)
0.056(1.4)
SOT–323
Mecha_Rn_ai_tic_ngal data
Symbol
Value
Unit
• Ep_Co_ox_ly_le:_cU_toL_r–9_E4_m-V_it0_ter_ra_Vt_oe_ld_taf_gl_eame retar_Vda_CEn_Ot
160
Vdc
3_0.040(1.0)
COLLECTOR
0.024(0.6)
• Ca_Cs_oe_ll:_eM_ctoo_rl_–d_Be_ad_sp_ela_Vs_ot_lti_ac_g, _eSOD-123H_{V CBO}
180
Vdc
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Emitter–Base Voltage
V EBO
6.0
Vdc
Method 2026
• Po^Cla^or^li^lety^ct:^oI^rn^Cd^uic^rra^etⁿe^td^—by^Cc^ona^ttⁱhⁿo^uod^ue^sband^{I C}
600
mAdc
0.031(0.8) Typ.
1
BASE
0.031(0.8) Typ.
2
Dimensions in inches and (millimeter_Es_M) _ITTER
•_TM_Ho_Eu_Rn_Mt i n_Ag_LP_Co s_Hi _At i o_Rn_A: _CA_Tn y_ERISTICS
• Weight : Approximated 0.011 gram
Characteristic
Symbol
Max
Unit
Tota_Ml D_Aev_Xic_Ie_MD_Uis_Msip_Rat_Aion_TF_INR_G– 5_SB_Aoa_Nrd_D, (_E1)_{LECTRICAPLD CHARACT22E5RISTICSmW}
Ratings at 2^T5^A℃^{= 2}a⁵m^°Cbient temperature unless otherwise specified.
Single phase^Deh^ra^alf^tew^aa^bv^oe^v,^e60²H^5°z^C, resistive of inductive load.
1.8
mW/°C
For capacitiv^Te^helo^ra^md^a,^ld^Re^er^saⁱt^se^tacⁿu^cr^ere^,n^Jt^ubⁿy^ct2^io0ⁿ%^{to Ambient}
RθJA
556
°C/W
Total Device Dissipation
Alumina S^Rub^As^Tt^Ir^Nat^Ge,^S(2) TA = 25°C
SYMBOL FM120^P-M^D H FM130-MH F³M⁰1⁰40-MH FM15^m0-^WMH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code_{Derate above 25°C}
12
13
2.¹4⁴
1_m5_W/°C 16
18
10
115 120
Maximum Rec_Tu_hr_ere_rmnt_aP_l e_Ra_ek_sR_ise_tav_ne_crs_ee_{, J}V_uo_nlt_ca_tg_ioe_{n to Ambient} VRRM
20_RθJA 30
41⁴7⁰
5_°0_C/W 60
80
100
150
200 Volts
Maximum RM_JS_unV_co_tl_it_oa_nge_{and Storage Temperature}
VRMS
T¹J⁴, Tstg ²¹ –55 to²+⁸150 ³⁵°C ⁴²
56
70
105
140 ^Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Maximum^EA^Lv^Eer^Cag^Te^RF^ICor^Awa^Lrd^CR^He^Act^Rifie^Ad^CC^Tu^Err^Ren^It^{STICS (TA =} I²O^{5°C unless otherwise noted.)}
1.0
Amps
Characteristic
Peak Forward Surge Current 8.3 ms single half sine-wave
superimpo_Ose_Fd_Fon_Cr_Hat_Aed_Rlo_Aad_C(_TJE_ED_RE_IC_STm_Ie_Cth_Sod)
IFSM
Symbol
Min
Max
Unit
30
Amps
Typical Therm_Ca_ol_llR_ee_cs_tois_rt_–a_En_mce_it(_tN_ero_Bte_re2_a) _{kdown Voltage(3)} RΘJA
Typical Junct₍io_I n_{C =}Ca₁p_.0ac_mita_An_dc_ce_, (_IN_Bo₌te₀₎1)
CJ
Operating Temperature Range
TJ
V (BR)CEO
-55 to +125
160
40
120
—
Vdc
-55 to +150
℃/W
PF
℃
Storage Temp_Ce_or_la_letu_cr_te_orR_–a_Bn_ag_se_{e Breakdown Voltage}
TSTG
- 65 to +175
℃
(I C = 10_C0_Hµ_AA_Rd_Ac_C,_TI_EE_R=_IS0)_TICS
V(BR)CBO
180
—
Vdc
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
Emitter–Base Breakdown Voltage
Maximum
Ave_(Ira_Eg₌e₁R₀e_µv_Aer_ds_ce_,
Current
I C = 0)
at
@T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
Collector Cutoff Current
0.50
V (BR)EBO
I CBO
0.70
0.85
6.0
0.5
—
Vdc
10
0.9
0.92 Volts
mAmp
NOTES:
( V CB = 120Vdc, I E = 0)
—
50
nAdc
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Res⁽is^VtaCnBc⁼e F¹r²o⁰m^VJ^du^cn^,ct^IioEn⁼to⁰A^{, T}mbAi⁼e¹n⁰t ^{0 °C)}
—
50
µAdc
Emitter Cutoff Current
I EBO
( V BE = 4.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
201²2⁰-1¹1^2-06
—
50
nAdc
WILL^WA^ILS^LE^AL^SE^EC^LT^ER^CO^TRN^OIC^NIC^CO^CR^OP^R. ^P.