MMBT5551WT1 Datasheet, PDF (4/5 Pages) WILLAS ELECTRONIC CORP – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

WILLAS
FM120-M+
MMBT5551WTT1HRU
1.0A^DS^UU^AR^LFA^NC^PE^NM^SO^MU^AN^LT^LS^SC^IH^GO^NT^AT^LK^SY^UB^RA^FR^AR^CIE^ER RECTIFIERS -20V- 200V
FM1200-M+
MOUNT TRANSISTOR
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low pro^2.f⁵ile surface mounted application in order to
optimize2 board space.
T J = –55°C to +135°C
• Low po₁w_.5er loss, high efficiency.
• High current capability, low forward voltage drop.
1.0
• High surge capability.
•
Guardr⁰i^.n⁵g
for
overvoltage
θ
protection.
VC for
V
CE(sat)
• Ultra hig⁰h-speed switching.
• Silicon–0e.5pitaxial planar chip, metal silicon junction.
• Lead-f_–r₁e_.0e parts meet environmental standards of
MIL-STD-19500 /228
θ VB for V BE(sat)
• RoHS ^–p¹r^.o⁵duct for packing code suffix "G"
Haloge–n2.0free product for packing code suffix "H"
Mech–2a.5nical data
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plasti^IcC, ^,S^CO^OD^L-^L1^E2^C3^TH^{OR CURRENT (mA)}
• Terminals :Plated^Ftⁱe^gr^um^ri^ena⁵l^.s^T, ^es^mold^pe^er^ra^ab^tule^repe^Cr^oM^eI^fL^f-^icSⁱT^eD^nt-^s750,
Method 2026
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
10.2 V
V in
V BB _{–8.8 V}
100
10 ms
INPUT PULSE
0.25 mF
t r , t f <10 ns
V in
DUTY CYCLE = 1.0%
RB
5.1 k
100
0.012(0.3) Typ.
V CC 30 V
3.⁰0^.0k^71(1.8R⁾ C
0.056(1.4)
V out
1N914
0.040(1.0)
0.024(0.6)
Values Shown are for I C @ 10 mA
0.031_F(0_i._g8)_uTy_rp_e. _{6. Switching Time Test Cir}0_c.0_u31_i(_t0.8) Typ.
• Pola₁₀r₀ity : Indicated by cathode band
1000
Dimensions in inches and (millimeters)
• Moun70ting Position : Any
50
• Weight : Approximated 0.011 gram
T J = 25°C
500
I C /I B = 10
T J = 25°C
30
300
t r @ V CC = 120 V
20 ^{MAXIMUM RATINGS AND ELECTRICAL CHARAC20T0ERISTICS}
t r @ V CC = 30 V
Ratings at 25℃ ambient temperature unless otherwise specified.
10
Single phase₇h_.0alf wave, 60Hz, resistive of inductive load_C. _ibo
100
For capacitive5.0load, derate current by 20%
50
t d @ V EB(off) = 1.0 V
3.0
Marking Code _2.0
RATINGS
SYMBOL
FM12C0-_obM_o H
FM130-MH
F₃M₀ 140-MH
FM150-MH FM160-MH
V CC = 120 V
FM180-MH
FM1100-MH
FM1150-MH FM1200-MH
UNIT
12
13 ₂₀ 14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Volts
Maximum RMS^1.V⁰⁰o_.l₂tage_0.3
0.7 0.5 1.0
2.0
3.0
V₅R_.M₀ S_7.0
14
10
21
20
10 ₂₈
35
42
56
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
70
105
140
20 30 50 100 200
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Maximum Average Forward Re^Vc^Rtif^,ie^Rd^EC^Vu^Err^Ren^St^{E VOLTAGE} I⁽O^VOLTS)
Figure 7. Capacitances Figure
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
I C , COLLE₁C_.0TOR CURRENT (mA)
Amp
8. Turn–On Time
30
Amp
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
5000
3000
2000
RΘJA
CJ
TJ
TSTG
t f @ V CC = 120 V
-55 to +125
t f @ V CC = 30 V
40
I C /I B = 10 120
T J = 25°C
- 65 to +175
-55 to +150
℃/W
PF
℃
℃
1000
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
500 _VF
0.50
0.70
0.85
0.9
0.92 Volts
Maximum Average Reverse Current at @T A=25℃₃₀₀
Rated DC Blocking Voltage
@T A=125℃₂₀₀
t ^Is^R@ V CC = 120 V
0.5
10
mAmp
NOTES:
100
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
50
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
20 30 50 100 200
I C , COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
2012²-⁰1¹1^2-06
WILL^WA^ILS^LE^AL^SE^EC^LT^ER^CO^TN^RI^OC^NC^ICO^CR^OP^R. ^P.