MMBT5551WT1 Datasheet, PDF (3/5 Pages) WILLAS ELECTRONIC CORP – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

WILLAS
FM120-M+
MMBT5551WT^TH1^RU
1.0A_DS_UU_AR_LFA_NC_PE_NM_SO_MU_AN_LT_LSC_SH_IGO_NT_ATK_LY_SB_UA_RR_FR_AI_CER_E RECTIFIERS -20V- 200V
FM1200-M+
MOUNT TRANSISTOR
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low pr⁵o⁰f⁰ile surface mounted application in order to
SOD-123H
•
optimi₃z₀e₀ board
Low po₂w₀₀er loss
space.
,^Th^Ji⁼g⁺h¹e²⁵f^°f^Cic
i
e
n
c
y.
• High current ca₊p₂₅a_°b_Cility, low forward voltage drop.
• High s₁u₀r₀ge capability.
0.146(3.7)
0.130(3.3)
V CE = 1.0 V
V CE = 5.0 V
0.012(0.3) Typ.
• Guardring for o–v5e5°rCvoltage protection.
• Ultra hi⁵g⁰h-speed switching.
• Silicon 3e0pitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
• Lead-fr²e⁰e parts meet environmental standards of
MIL-STD-19500 /228
• RoHS pr₁o₀duct for packing code suffix "G"
Halogen_7.0free product for packing code suffix "H"
Mech⁵a^.0nical data
0.1
0.2 0.3
0.5 0.7 1.0
• Epoxy : UL94-V0 rated flame retardant
2.0 3.0
5.0 7.0 10
20
30
0₅.₀040(1.₇0₀) ₁₀₀
0.024(0.6)
• Case : Molded plastic, SOD-123H
I C , COLLECTOR CURRENT (mA)
0.031(0.8) Typ.
•
Terminals
:Plated
terminals,
solderable
per
Figur^,e
MIL-STD-750
15.
DC
Current
Gain
0.031(0.8) Typ.
Method 2026
1.0
• Polarity : Indicated by cathode band
T J = 25°C
• Mounting Position : Any
0.8
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
I C = 1.0 mA
10 mA
30 mA
M^0.6AXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
100 mA
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase hal⁰f^.4wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.2 _RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent⁰Peak Reverse Voltage
0.005
0.01
0.02
Maximum RMS Voltage
12
13
VRRM
20
30
0.05
VRMS^0.1
14 ^0.2
21 ^0.5
14
15
40
50
28 ^1.0 35 ^2.0
16
60
42 ^5.0
18
80
56 ¹⁰
10
100
70 ²⁰
115 120
150
200
105 ⁵⁰ 140
Volts
Volts
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
VDC
20 _{I B , B}3_A0_{SE CUR}4_R0_{ENT (m}5_A0₎
60
80
100
150
200 ^Volts
IO _{Figure 16. Collector Saturation Region}1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
Amps
Typical Thermal Re¹⁰si¹stance (Note 2)
Typical Junction Capacitanc^Ve C(EN⁼o³te^{0 V}1)
RΘJA
CJ
1.0
40
T J = 25°C
120
℃/W
PF
Operating Tempera¹⁰tu⁰re Range
Storage
Temperature
10 ^–1
Range_T
J
=
125°C
CHARACTERISTICS
10 ^–2
Maximum Forward Voltage at 1.0A D⁷C^5°C
TJ
-55 to +125
0.8
-55 to +150
℃
TSTG
- 65 to +175
V BE(sat) @ I C /I B = 10
℃
I C = I CES
0.6
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
Maximum Average₁₀R_–e₃ verse CRuErrVeEnRt SaEt @T A=25_F℃_{ORWARD IR}
Rated DC Blocking Voltage
@T A=125℃
25°C
10 ^–4
NOTES:
0.4
0.5
10
0.2
V CE(sat) @ I C /I B = 10
mAmps
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
10 ^–5
0
2- Thermal Resistance F–0ro.4m –J0u.n3cti–o0n.2to A–0m.1bien0t 0.1 0.2 0.3 0.4 0.5 0.6
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
V BE , BASE–EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut–Off Region
I C , COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
201²2⁰-¹1²1^-06
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