MMBT5551WT1 Datasheet, PDF (2/5 Pages) WILLAS ELECTRONIC CORP – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

WILLAS
FM120-M+
MMBT5551WT^TH1^RU
1.0ADSUUARLFANCPENMSOMUANLTLSCSHIGONTATKLYSBUARRFRAICERE RECTIFIERS -20V- 200V
FM1200-M+
MOUNT TRANSISTOR
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Lo^Ew^LEp^Cro^Tfi^Rle^ICsu^Ar^Lfa^Cce^Hm^Ao^Ru^An^Cte^Td^Ea^Rp^Ip^Sli^Tc^Ia^Cti^Son^(Tin^Ao⁼rd²e⁵r^°Cto^{unless otherwise noted) (Continued)}
SOD-123H
optimize board space.Characteristic
Symbol
Min
Max Unit
• Lo_Ow_Np_Co_Hw_Aer_Rlo_As_Cs_T, h_Ei_Rgh_ISe_Tff_Ii_Cci_Sency.
• High c_Du_Crr_Cen_ut_rrc_ea_np_{t G}ab_ai_inlity, low forward voltage drop.
• High s₍u_{I C}rg₌e₁c_.0ap_ma_Ab_di_cli_,ty_V. _{CE = 5.0 Vdc)}
• Guardring for overvoltage protection.
0.146(3.7)
h_FE
0.130(3.3)
0.012(0.3) Typ.
––
80
—
• Ultra high-speed switching.
•
(I
Silicon
e^C
=
pi
t¹a⁰x^mia^Al p^dcla^, n^Va^Cr^Ec⁼h⁵ip^.0,
Vdc)
metal
silicon
junction.
80
250
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-S⁽T^I CD⁼-1⁵9⁰5^m00^Ad/2^c,2^V8 CE ^{= 5.0Vdc)}
• RoHS product for packing code suffix "G"
30
—
Haloge_Cn_of_llr_ee_ce_top_rr_–o_Ed_muc_itt_tefo_r r_Sp_aa_tuc_rk_ain_tig_onco_Vd_oe_ltas_gu_effix "H"
Mech_(Ia_{C =}n₁i₀c_ma_Al_dd_c, a_{I B}t₌a_{1.0 mAdc)}
• Epoxy : UL94-V0 rated flame retardant
• Case ⁽:^IM^{C =}ol⁵d⁰ed^mp^Al^da^cs^,t^Iic^B,⁼S⁵O^.0D^m-1^A2^d3^cH⁾
,
• Termin_Ba_al_ss_e–:P_El_mat_ite_ted_rt_Se_arm_tui_rn_aa_tiols_n, _Vs_oo_ll_td_age_erable per MIL-STD-750
(I _C = 1^M0^em^thA^od^dc,²I⁰B²=⁶1.0 mAdc)
• Polarity : Indicated by cathode band
V_CE(sat)
0.031(0.8) Typ.
Vdc
—
0.15
0.040(1.0)
0.024(0.6)
—
0.20
0.031(0.8) Typ.
V _BE(sat)
Vdc
—
1.0
Dimensions in inches and (millimeters)
• Mount(iIn_Cg=P5o0smitAiodnc,: AI _Bn=y 5.0 mAdc)
—
1.0
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
60
80
100
150
200 Volts
VRMS
14
21
28
35
42
56
70
105
140 ^Volts
VDC
20
30
40
50
60
80
100
150
200 ^Volts
IO
1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
Amps
℃/W
PF
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
0.5
mAmps
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
201²2⁰-¹1²1^-06
WIL^WLA^ILS^LAE^SLE^EC^LT^ER^CTO^RN^OIC^NIC^CO^CR^OP^R.^P.