MMBT2907ADW1T1 Datasheet, PDF (5/5 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistor

WILLAS
MMBT2907AD^FW^M_T1¹_HT²_R1⁰_U^-M+
D₁u_.0a_Al_SUG_RFe_An_CEe_Mr_Oa_Ul_NP_{T S}u_Cr_Hp_OTo_TKs_Ye_BAT_Rr_Ra_IEn_{R R}s_Ei_Cs_Tt_IFo_IEr_{RS -20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
SOT-363
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection..087(2.20)
• Ultra high-speed switching.
.071(1.80)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated termin_.0a₃ls₀,₍s₀o_.l₇d₅e₎rable per MIL-STD-750
Method 2026_.021(0.55)
• Polarity : Indicated by cathode band
• Mounting Position : Any_.056(1.40)
• Weight : Approximated 0_.0.0₄1₇1₍g₁r_.a₂m₀₎
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.010(0.25)
.0_D0_im3_e(_n0_s._io0_n8_s)_{in inches and (millimeters)}
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half w_.a₀v₀e₄, 6₍₀0H_.1z₀, ₎re_Ms_Aist_Xiv_.e of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
.016(0.^V4^R0^R)^{M 20}
30
40
50
60
VRMS
14
21
28
35
42
.004(0.10)
VDC
20
30
40
50
60
18
10
115 120
80
100
150
200
56
70
105
140
80
100
150
200
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
Typical Thermal Resistance (Note 2) ^DimensionsRⁱΘⁿJA^{inches and (millimeters)}
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
Storage Temperature Range
TSTG
30
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS ^{0.5 mm (min)}SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
0.5
Rated DC Blocking Voltage
@T A=125℃
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
1.9 mm
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.