MMBT2907ADW1T1 Datasheet, PDF (2/5 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistor

WILLAS
MMBT2907AD^FW^M_T1¹_HT²_R⁰1_U^-M+
D₁u_.0a_Al_SUG_RFe_An_CEe_Mr_Oa_Ul_NP_{T S}u_Cr_Hp_OTo_TKs_Ye_BAT_RRr_Ia_ERn_Rs_Ei_Cs_Tt_IFo_IEr_{RS -20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
ELE_•C_LT_oR_wIC_pA_roL_filC_eH_suA_rR_faA_cC_e T_mE_oR_unIS_teT_dIC_aS_pp(_lT_icAa=_ti2_o5_n°C_inu_on_rl_de_ess_{r t}o_otherwise noted) (Continued)
SOD-123H
optimize boardCshpaarcaect.eristic
Symbol
Min
Max
Unit
ON C^• H^LoA^wR^pA^oC^wT^eE^r R^loI^sS^sT^, I^hC^igS^{h efficiency.}
•_DH_Cig_Ch_urc_ru_enrr_te_Gn_at_ic_napability, low forward voltage drop.
••_(IGHCiu₌gah_{–r0ds.ru1irnm}gg_Aef_doccar_,
p_Va_Cb_Ei₌lit_–y._{10 Vdc)}
overvoltage pr
o
te
c
t
i
o
n
.
MMBT2907
MMBT2907A
• Ultra high-speed switching.
•^(IS^Ci⁼li^–c¹o^.n^0mep^Ai^dta^cx^,
V
ia
l^CEp⁼la^–n¹a⁰r
Vdc)
chip,
metal
silicon
MMBT2907
junction.
• Lead-free parts meet environmental standar^Md^Ms ^Bo^Tf ^2907A
(I_{MC I}=_L–_-S10_TDm_-A₁d₉c₅,₀V_0C/E2=₂–₈10Vdc)
MMBT2907
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
h_FE
––
35
––
75
––
50
––
0.071(1.8)
0.056(1.4)
100
––
75
––
• RoHS product for packing code suffix "G"
MMBT2907A
100
––
(I^HC^a=^lo–^g1^e5ⁿ0^fm^reA^ed^pc^r,^oV^duCE^c=^{t f}–^o1^r0^pV^acd^kcⁱ)ⁿ(3^g)^{code suffix "H"}MMBT2907
Mechanical data
MMBT2907A
•^(IECp⁼o^–x⁵y⁰:⁰U^mL^A9^d4^c-^,V^V0CrEa⁼t^–e¹d⁰fl^Va^dm^c)e⁽³r⁾etardant
MMBT2907
––
––
100
300
30
––
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
MMBT2907A
Collector–Emitter Saturation Voltage(3)
,
•_(IT_Ce₌rm_–1in₅a₀l_ms _A:P_dl_ca_,t_Ie_Bd₌te_–1rm₅ i_mn_Aal_ds_c,₎solderable per MIL-STD-750
(I _C = –500 mA^Md^ec^t,^hI^oB^d= ²â€“⁰5²0⁶mAdc)
•_BP_aso_ela_–r_Eit_my_i:_tteIn_rd_Si_ac_ta_ut_re_ad_tiob_ny_Vc_oa_ltt_ah_go_ed₍₃e₎band
•(IM_Co=u–n1t5in0gmPAodcs,itIio_B n= :–A15nymAdc)
50
V ^{0.031(0.8) Typ.}
CE(sat)
––
––
–0.4
Vdc ^{0.031(0.8) Typ.}
V _BE(sat)
––
–1.6
Dimensions in inches and (mil_Vlim_de_cters)
––
–1.3
•^(IWC ⁼ei^–g⁵h⁰t ⁰: ^mA^App^dcro^, x^I iBm⁼a^–t⁵e⁰d^m0.^A0^d1^c1⁾ gram
––
–2.6
SMALL–SIG_MN_AA_XL_IC_MH_UA_MRA_RC_AT_TE_IR_NI_GST_SIC_AS_{ND ELECTRICAL CHARACTERISTICS}
Current–Gain — Bandwidth Product(3),(4)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single ph^(Ia^Cs⁼e ^–h⁵a⁰lf^mw^Aa^dv^ce^,,^V60^CH^E=z,^–r²e⁰s^Vis^dti^cv^,e^f o⁼f¹in⁰d⁰u^Mc^Htiv^ze⁾ load.
Output Capacitance
For capacitive load, derate current by 20%
(V _CB = –10 Vdc, I _E = 0, f = 1.0 MHz)
f
T
C
obo
200
––
MHz
––
8.0
pF
Input Capacita^Rn^Ac^Te^INGS
Marking C_(Vod_Ee_{B = –2.0Vdc, I C = 0, f = 1.0 MHz)}
Maximum Recurrent Peak Reverse Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
C_1i4bo
15 ^–– 16
30 ₁₈
p₁F₀
115 120
VRRM
20
30
40
50
60
80
100
150
200
Max^Sim^Wu^Im^TCRM^HS^INV^Golt^Cag^He^{ARACTERISTICS}
VRMS
14
21
28
35
42
56
70
105
140
Maximum^TuD^rC^n–B^Oloⁿc^Tkⁱi^mng^eVoltage
Maximum^DeA^lv^ae^yra^Tg^ime ^eForward Rectified
Rise Time
(V CC = –30 Vdc,
C_{I C}ur₌re_–n₁t_{50 mAdc,}
I
VDC
B1^IO= –15
20
mAdc)
30
t₄o₀n
t^d
tr
50 ^— 60 ⁴⁵ 80
— _1.0 10
—
40
100
ns
150
200
Peak ForwFarlldTSimurege Current 8.3 ms
superimpSostoedraogneraTtiemdeload (JEDEC
Typical TThuerrnm–aOl fRf eTsimisteance (Note
single half sine-wave
met⁽h^Vod^C)^{C = –6.0 Vdc,}
I C = –150 mAdc,I
2)
IFSM
R^B1Θ⁼JA^I
B2
=
15
mAdc)
tf
ts
t off
—
30 ³⁰
—
80
ns
— 40 100
Typical Junction Capacitance (Note 1)
CJ
120
Ope3r.aPtinuglsTeeTmepset:rPatuulrseeRWanidgteh < 300 µs, Duty Cycle < T2.J0%.
-55 to +125
-55 to +150
Stor4a.gfeT TisemdepfeinraetduraesRtahnegferequency at which |h f e | extTraSpToGlates to unity.
- 65 to +175
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum F^Io^Nr^Pw^Ua^Trd Voltage at 1.0A DC
VF
Maximum A^Zve^or⁼ag⁵e⁰ R^Ωeverse Current at @_–3T₀A_V=25℃
Rated DC B^PRlo^RISc^Fk_Ei⁼n_Tg^1IM5V^0Eo^Pl_<t^Pa^Sg₂e_{.0 ns}
@T A=125₂₀℃₀
IR
NOTES: ^{P.W. <200 ns}
IN_0.P₅U₀T
Z O= 50
Ω
0.70
PRF = 150 PPS
+15 V^0.5
RISE TIME <2.0 ns
10
P.W. < 200 ns
1.0 k
0.85
–6.0 V
37
0.9
0.92
1.0 k
1-
Measured
at
0
1
MHZ
and
applied
reverse
voltage
of
4.0_TOVD_OC_S._CILLOSCOPE
0
1.0 k
TO OSCILLOSCOPE
2- Thermal Resistance From Junction to Ambient
–16 V
50
RISE TIME < 5.0 ns
–30 V
50 _1N916
RISE TIME < 5.0 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
200 ns
Figure 2. Storage and Fall Time Test Circuit
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.