MMBT2907ADW1T1 Datasheet, PDF (3/5 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistor

WILLAS
MMBT2907AD^FW^M_T1¹_HT²_R⁰1_U^-M+
D₁u_.0a_Al_SUG_RFe_An_CEe_Mr_Oa_Ul_NP_{T S}u_Cr_Hp_OTo_TKs_Ye_BAT_RRr_Ia_ERn_Rs_Ei_Cs_Tt_IFo_IEr_{RS -20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and therma_Tl r_Ye_Psi_Is_Cta_An_Lce_C. _{HARACTERISTICS}
• Low profile surface mounted application in order to
SOD-123H
o₃p_.0timize board space.
• Low power lo_Vss_CE,₌h_–ig_1.h_{0 V}efficiency.
• H²i^.g⁰ h current cVa_CEp=a–b1i0litVy, low forward voltage drop.
T J = 125°C
0.146(3.7)
0.130(3.3)
• High surge capability.
• Guardring for overvoltage protection.
25°C
• U¹l^.t⁰ra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
•
0.7
Lead-free
parts
meet
environmental
standards
of
–55°C
M_0.I₅L-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
M⁰e^.3chanical data
• E0p.2oxy : UL94-V0 rated flame retardant
•
–0.1
Case
:
–0.2
Molded
–0.3
plastic,
–0.5 –0.7 –1.0
SOD-123H
–2.0 –3.0 –5.0 –7.0 –10
–20 –30 –50 –70 –100
0.031(0.8) Typ.
–200
• Terminals :Plated terminals, solderable per MI^IL^C-S^{, C}T^OD^L-7^L5^E0^{C,TOR CURREN (mA)}
Method 2026
Figure 3. DC Current Gain
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
–300 –500
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
•–M1.0ounting Position : Any
• Weight : Approximated 0.011 gram
–0.8
M^I A^{C =}X^–I¹M^{.0 m}U^AM RATINGS ^–A¹⁰N^mD^A ELECTRICAL CHAR^–A¹⁰C⁰ T^mE^A RISTICS
–500 mA
Ratings _–a₀t_.625℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
–0.4
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking C_–0o_.d₂e
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
0
VRMS
14
21
28
35
42
56
70
105
140
Maximum D_–C_0.0B₀lo_5–c₀k_.i₀n₁g Volt_–a₀g_.0e_{2 –0.03 –0.05 –0.7 –0.1 VD–C0.2 –0.3}20 _{–0.5 –}3₀0_{.7 –1.0} 40 _{–2.0 –}5₃0_{.0 –5.0}6_–0_{7.0 –10} 80 _–20 1_–0₃0_{0 –50} 150
200
Maximum Average Forward Rectified Current
IO_{I B , BASE CURRENT (mA)}
1.0
Peak Forward Surge Current 8.3 ms single half sine-wa^Fve^igur_I^e_FS⁴_M^{. Collector Saturation Region}
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
300
Typical Junction Capacitance (Note 1)
200
Operating Temperature Range
Storag¹e⁰⁰Temperature Rt ar nge
70
50
CHARACTERISTICS
RΘJA
40
300
CJ
V CC = –_T30_J V
200
-55 to +125
120
-5^V5^CCt⁼o ^–+³1⁰5^V0
I C /I B _T=_S1_T0_G
T J = 25°C
SYMBOL
FM120-MH
100
70
FM130-⁵M⁰H
FM140-MH
tf
FM150-MH
- 65 to +175
I C /I B = 10
I B1 = I B2
T J = 25°C
FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Maximu₃m₀ Forward Voltage at 1.0A DC
VF
Maximu₂m₀ Average Reverse Current at @T A=25℃
IR
Rated DC Bloc_tk_din_@g _VVo_BEl₍t_oa_ff)g₌e_{0 V}
@T A=125℃
10
30^0.50
20
10
0.70
t
’
s
=
t
s
–
1/8
t
0.5
f
10
0.85
0.9
0.92
NOTES₇: _.0
7.0
1- Meas₅u_.0red at 1 MHZ and applied reverse voltage of 4.0 VD₂C_.0._V
5.0
2- Therm_3.0al Resistance From Junction to Ambient
–5.0–7.0 –10 –20 –30 –50 –70 –100
–200 –300 –500
3.0
–5.0–7.0 –10
–20 –30 –50 –70 –100 –200 –300 –500
I C , COLLECTOR CURRENT
Figure 5. Turn–On Time
I C , COLLECTOR CURRENT (mA)
Figure 6. Turn–Off Time
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.