MMBT2907ADW1T1 Datasheet, PDF (4/5 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistor

WILLAS
MMBT2907AD^FW^M_T1¹_HT²_R⁰1_U^-M+
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FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Package outline
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CHARACTERISTICS
better reverse leakage current and thermal resis_Nta_On_Ic_Se_E. _FIGURE
SOD-123H
•
Low profile surface mounted
optimize board space.
application
in
o_V r
de
CE
r₌t
o₁₀
Vdc,
T
A
=
25°C
• Low power loss, high efficiency.
•10High current capability, low forward voltage drop.
10
0.146(3.7)
0.130(3.3)
• High surge capability.
8^•.0^{Guardring for overvoltage protection.}
• Ultra high-speed switching.
f=1.0 kHz
8.0
• Silicon epitaxial planar chip, metal silicon junction.
6_•.0_Lead-free
MIL-STD-
I C = –1.0 mA, R S= 430
parts_–5m₀₀ee_µAt _,e_Rn
19500 /228
v_S=ir₅o₆n₀m_Ωe
Ω
nt
a
l
standards
of
6.0
• RoHS product fo^–r⁵p⁰a^µc^Ak^,in^Rg^S=co²d^.7e^ks^Ωuffix "G"
4.0
Halogen
free
pro^–d¹u⁰⁰ct^µf^Ao^,r^Rpa^S=ck¹i^.n⁶g^k
c^Ωode
suffix
"H"
4.0
I C = –50µA
–100 µA
–500 µA
–1.0 mA
Mechanical data
2.0
RS=OPTIMUM SOURCE RESISTANCE
• Epoxy : UL94-V0 rated flame retardant
2.0
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
0
,
• 0T.0e1rm0.0i2na0ls.05:P0l.a1 te0d.2 ter0m.5ina1.l0s, 2s.0olde5.r0ab1l0e p2e0r MI5L0-S1T00D-750
Metho_f,d_F2_R0_E2_Q6_{UENCY (kHz)}
• Polarity : In_Fd_iic_ga_ut_re_ed₇b_.y_Fc_ra_et_qh_uod_ee_ncb_yan_Ed_ffects
• Mounting Position : Any
0
50
0.031(0.8) Typ.
100 200
500
1.0 k
2.0 k
0.031(0.8) Typ.
5.0 k 10 k 20 k 50 k
R S, SOURCE RESISTANCE ( Ω )
Figure 8.^DS^imo^eu^nsrⁱc^one^s Rⁱⁿeⁱⁿs^ci^hs^et^sa^anⁿc^de^(mE^illf^imfe^ec^tet^rs^s)
•₃₀Weight : Approximated 0.011 gram
400
300
20 _{MAXIMUM RA}C_{TIeNb GS AND ELECTRICAL CHARACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
200
Single phase half wave, 60Hz, resistive of inductive load.
For cap¹a⁰citive load, derate current by 20%
100
7.0
RATINGS
Marking ₅C_.0ode
Maximum Recurrent Peak Reverse Voltage
Maximum_3.0RMS Voltage
SYMBOL FM120-MH FM130-M⁸H⁰ FM140-MH FVMC1E=50–-2M0HVFM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
C cb ¹²
60
13
14
T J₁=₅25°C ₁₆
18
10
115 120
VRRM
20
30
40
40
50
60
80
100
150
200
VRMS
14
21 ₃₀ 28
35
42
56
70
105
140
Maximum DC Blocking Voltage
Maximum^2.0A_–0v_.e₁ra_–g₀e_.2F_–o₀r_.w₃ a_–rd_0.5Rect_–if₁i_.e₀d Cu_–2rr_.0en_–t_{3.0 –5.0}
VDC
20
–10^IO –20 –30
30
40
20
–1.0 –2.0
50
60
80
100
150
–5.0 –10 –20^1.0 –50 –100 –200 –500 –1000
200
Peak Forward Surge CurreRntE8V.3EmRsSsEinVglOe LhTaAlf GsinEe-(wVaOvLeTS)_IFSM
superimposed on rated load F(JiEgDuErCem9e.thCoad)pacitances
I
C
,
COLLECTOR CURRENT
30
(mA)
Figure 10. Current–Gain — Bandwidth Product
Typical Thermal Resistance (Note 2)
Typica^–l¹J^.0unction Capacitance (Note 1)
Operating TemTpeJ =ra2t5u°rCe Range
Storag_–e_0.8Temperature Range ^V BE(sat) ^{@ I} C ^/I B ^{= 10}
RΘJA
CJ
TJ
TSTG
+0.5
-55 to +125
0
40
120
R^- θ⁶V⁵C fo^tor V⁺C¹E⁷(sa⁵t)
-55 to +150
–0.6
CHARACTERISTICS V @ BE(on) V CES=Y–M10BOVL FM120-MH FM130^–-⁰M^.5H FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
– 1.0
Maximum Average Reverse Current at @T A=25℃
Rated^–D^0.C⁴ Blocking Voltage
@T A=125℃
IR
–1.5
0.5
10
NOTES_–:_0.2
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
V CE(sat) @ I C /I B = 10
2- Thermal Resistance From Junction to Ambient
0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
–500
–2.0
R θVB for V BE
–2.5
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
I C , COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
I C , COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.