MMBT2907ADW1T1 Datasheet, PDF (1/5 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistor

WILLAS
MMBT2907A^FD^MW_T¹_H1²_RT⁰1_U^-M+
D1.u0AaSlURGFAeCnE MeOrUaNlTPSCuHrOpTToKYsBeARTRIrEaRnREsCiTsIFtIEoRrS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
Fe_•a_Htr_iu_ge_hs_{current capability, low forward voltage drop.}
0.146(3.7)
0.130(3.3)
z•WHeigdhescularrgeetchaapt athbeilimtya. terial of product compliance with RoHS requirements.
z•_PG_bu_-Far_rd_er_ein_pg_afo_cr_ko_av_ge_erv_isolt_aa_vg_ae_ilp_ar_bo_lt_ection.
•_RU_ol_Htra_Sh_pig_roh_d-s_up_ce_te_fod_rs_pw_ait_cc_kh_ii_nn_gg._{code suffix ”G”}
•_HS_ai l_li_oc_go_en_ne p_fri_et a_ex_pi a_rl_op_dl_ua n_cta r_foc_rh_pi p_a,_cm_kie_nt_ga l _cs_oi l_di c_eo n_suj u_ffn_ixc t_“i_Ho n_” .
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
MAXIM_•U_RM_oHR_SA_pT_roIN_duG_cS_{t for packing code suffix "G"}
Halogen free product for packing code suff^Vix^al"^uH^e"
M^Re^ac^tinh^ganical data^{Symbol 2907 2907A Unit}
65
1
2
3
SOT-363
Colle_•c_Eto_pr–_oE_xym_:it_Ute_Lr ₉V₄ol_-t_Vag₀e_rated
f
l
a
V
m
e^CEr^Oe
t
ar
d
–40
ant
–60
Vdc
Colle_•c_Cto_ar–_sB_ea_:s_Me _oV_lo_dl_eta_dge_{plastic, SO}V_D-C₁BO_23H
–60
Vdc
0.031(0.8) Typ. ₍₃₎
(2)
Emit_•te_Tr–_eB_rmas_ine_aV_lsol_:ta_Pg_lae_{ted termina}V_ls,EB_sO_{olderable p}–_e5._r0_MIL-STDV_-7d₅c_0,
0.012(0.3) Typ.
4^0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0₍.₁03₎1(0.8) Typ.
Collector Current —^MeC^to^hn^oti^dnu²o⁰u²s⁶ I C
• Polarity : Indicated by cathode band
THERM_{• M}AL_ouC_nH_tinA_gR_PA_oC_siT_tiE_oR_n I_:S_AT_nI_yCS
–600
mAdc
Dimen^Qsio1ns in inches and (millimeters)
Q₂
• Weigh^Ct ^h: A^arp^ap^cr^to^ex^rii^sm^tia^cted 0.011 gram ^Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1) PD
225
mW
TA = 25°C ^{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (4)}
(5)
(6)
RatinDgesraatte2a5b℃ovea2m5b°iCent temperature unless otherwise specified1.8
mW/°C
SingTleheprhmaasleRheaslfiswtaanvcee,,6J0uHnczt,iorenstiostAivmeboief nintductivReθJloA ad.
556
°C/W
For cTaoptaalcDiteivveicleoaDdis,sdipearatitoencurrent by 20%
PD
300
mW
Alumina Substrate_R, _A(2_T)_IT_NA_G=_S25°C
Marki^Dng^erC^ato^ede^{above 25°C}
Maxim^Thu^em^rmR^ae^lc^Rur^ere^sn^ist^taPⁿe^ca^ek^,R^Je^uvⁿe^cr^ts^ioeⁿV^to^olt^Aa^mge^bient
Maxim^Juuⁿm^ctR^ioMⁿS^anV^dol^Sta^tg^oe^{rage Temperature}
Maximum DC Blocking Voltage
DEVICE MARKING
Maximum Average Forward Rectified Current
SYMBOL
FM120-MH
2₁.₂4
FM130-MH FM140-MH
13^mW/°C 14
FM150-MH
15
FM16_O0-M_RH_DF_EM_R1_I8_N0-_GMH_INFM_F1_O10_R0-_MMH_ATFM_IO11_N50-MH
16
18
10
115
FM1200-MH
120
U
RθJA_VRRM
4₂1₀7
30^°C/W 40
50 Dev6i0ce
80 Markin1g00 Sh1ip5p0ing 200 Vo
TJ , T_Vst_Rg _MS –55 t₁o₄+150 ₂₁ °C ₂₈
MM³⁵BT2907⁴A²DW1T1 ⁵⁶ 2F ⁷⁰ 3000 U¹⁰n⁵its/Ree¹l ⁴⁰
Vo
VDC
20
30
40
50
60
80
100
150
200 ^Vo
IO
1.0
A
MMBT2907ADW1T1 = 2F
Peak Forward Surge Current 8.3 ms single half sine-wave
su^Epe^Lr^Eim^Cpo^Ts^Red^ICon^Ar^Late^Cd^Hlo^Aad^R(^AJE^CD^TE^EC^Rm^Ie^Sth^To^Id^C) ^{S (TA = 25°C}
u^IFn^Sle^Mss
otherwise
noted.)
30
A
Typical Thermal ResCishtaanracect(eNroistetic2)
RΘJA
Symbol
Min
Max 40 Unit
℃
Ty_Op_Fic_Fal _CJu_Hnc_Ati_Ron_AC_Ca_Tpa_Ec_Rita_ISnc_Te_IC(N_Sote 1)
Operating Temperature Range
CJ
TJ
-55 to +125
120
-55 to +150
P
℃
Storag^Ce^olT^lee^cm^top^re^–r^Eat^murⁱe^tteR^ra^Bn^rg^ee^{akdown Voltage(3)}
TSTG
V (BR)CEO
- 65 to +175^Vdc
℃
(I C = –10 mAdc, I B = 0)
MMBT2907
–40
—
CHARACTERISTICS
SMYMBBOTL29F0M71A20-MH FM130-MH FM140-M–6H0FM150-MH —FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
MaximCuomlleFcotorwr–aErdmVitoteltragBereaatk1d.0oAwnDCVoltage(I C = –10 µAdVcF, I E = 0)
V (BR)0CB.5O 0
–60
0.70—
Vdc 0.85
0.9
0.92 Vo
MaximEummittAevre–rBaagseeRBerveearskedoCwunrreVnotltaatge@(ITEA==–2150℃µAdc, I_IC_R= 0)
V (BR)EBO
–5.0
— 0.5 Vdc
mA
Rated^CD^oC^lleB^cl^to^oc^rk^Cin^ug^toV^fo^f l^Cta^ug^re^{rent( V} CB ^{= –3}@⁰T^VA^d=^c1^, 2^I5B℃E(OFF) ^{= –0.5Vdc)}
I CEX
—
–50 10 nAdc
Collector Cutoff Current
NOTES₍ :_{V CB = –50Vdc, I E = 0)}
MMBT2907
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC_M._MBT2907A
I CBO
µAdc
—
–0.020
—
–0.010
2- Thermal Resistance From Junction to Ambient
( V CB = –50Vdc, I E = 0, T A =125°C )
MMBT2907
MMBT2907A
Base Current( V CE = –30Vdc, V = EB(off) –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
2012-06
2012-0
—
–20
—
–10
IB
—
–50
nAdc
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.