WCMC8016V9X Datasheet, PDF (4/12 Pages) Weida Semiconductor, Inc. – 8Mb (512K x 16) Pseudo Static RAM

ADVANCE INFORMATION
WCMC8016V9X
Electrical Characteristics Over the Operating Range
Parameter
V_CC
V_OH
Description
Test Conditions
Supply Voltage
Output HIGH Voltage I_OH = –1.0 mA
V_CC = 2.70V
WCMC8016V9X-70
Min. Typ.^[8] Max. Unit
2.7
3.3
V
2.4
V
V_OL
Output LOW Voltage I_OL = 2.0mA
V_CC = 2.70V
0.4
V
V_IH
Input HIGH Voltage V_CC= 2.7V to 3.3V
V_IL
Input LOW Voltage V_CC= 2.7V to 3.3V(F = 0)
0.8*Vcc
-0.3
V_CC
V
+0.3V
0.4
V
I_IX
Input Leakage
GND < V_I < V_CC
Current
I_OZ
Output Leakage
GND < V_O < V_CC, Output Disabled
Current
I_CC
V_CC Operating Supply f = f_MAX = 1/t_RC
Current
f = 1 MHz
V_CC = V_CCmax
I_OUT = 0 mA
CMOS levels
I_SB1
Automatic CE
CE > V_CC−0.2V or CE₂< 0.2V Vcc = 3.3V
Power-Down
V_IN>V_CC–0.2V, V_IN<0.2V)
Current — CMOS f = f_MAX (Address and Data
Inputs
Only),
f = 0 (OE, WE, BHE and BLE),
V_CC=3.30V
I_SB2
Automatic CE
CE > V_CC – 0.2V or CE₂ <
Vcc = 3.3V
Power-Down
Current — CMOS
0.2V,
V_IN > V_CC – 0.2V or V_IN < 0.2V,
Vcc = 3.0V
Inputs
f = 0, V_CC = 3.30V
Vcc = 2.8V
Capacitance^[10]
Parameter
C_IN
C_OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T_A = 25°C, f = 1 MHz,
V_CC = V_CC(typ)
Thermal Resistance^[10]
–1
–1
11
2.0
55
50
45
Max.
6
8
+1
µA
+1
µA
17
mA
3.5 mA
400
µA
80
µA
70
µA
60
µA
Unit
pF
pF
Description
Test Conditions
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 × 4.5 inch, two-layer printed
circuit board
Thermal Resistance
(Junction to Case)
Note:
10. Tested initially and after any design or process changes that may affect these parameters.
Symbol
Θ_JA
Θ_JC
BGA
55
16
Unit
°C/W
°C/W
38-14026
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