WCMC8016V9X Datasheet, PDF (3/12 Pages) Weida Semiconductor, Inc. – 8Mb (512K x 16) Pseudo Static RAM

ADVANCE INFORMATION
WCMC8016V9X
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied .............................................. –55°C to + 85°C
Supply Voltage to Ground Potential ................. –0.4V to 4.6V
Operating Range^[9]
DC Voltage Applied to Outputs
in High Z State^{[5, 6, 7]} ........................................–0.2V to 3.3V
DC Input Voltage^{[5, 6, 7]}.....................................–0.2V to 3.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .....................................................>200 mA
Device
WCMC8016V9X
Range
Industrial
Ambient Temperature
–25°C to +85°C
V_CC
2.70V to 3.30V
Product Portfolio
Product
V_CC Range (V)
Min.
Typ.^[8]
Max.
Speed
(ns)
Power Dissipation
Operating I_CC(mA)
f = 1MHz
f = f_max
Typ.^[8] Max. Typ.^[8] Max.
Standby I_SB2(µA)
Typ.^[8] Max.
WCMC8016V9X-FI70 2.70
3.0
3.30
70
2
3.5
11
17
55
80
Notes:
5. V_IH(MAX) = V_CC + 0.5V for pulse durations less than 20ns.
6. V_IL(MIN) = -0.5V for pulse durations less than 20ns.
7. Overshoot and undershoot specifications are characterized and are not 100% tested.
8. Typical values are included for reference only and are not guranteed or tested. Typical values are measured at V_{C C} = V_CC (typ) and T_A = 25C
9. V_CC must be at minimal operational levels before inputs are turned ON.
38-14026
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