WCMC8016V9X Datasheet, PDF (1/12 Pages) Weida Semiconductor, Inc. – 8Mb (512K x 16) Pseudo Static RAM

ADVANCE INFORMATION
WCMC8016V9X
8Mb (512K x 16) Pseudo Static RAM
Features
• Wide voltage range: 2.70V–3.30V
• Access Time: 70ns
• Ultra-low active power
— Typical active current: 2.0mA @ f = 1 MHz
— Typical active current: 11mA @ f = f_max
• Ultra low standby power
• Easy memory expansion with CE, CE₂, and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Offered in a 48 Ball BGA Package
Functional Description^[1]
The WCMC8016V9X is a high-performance CMOS pseudo
static RAM organized as 512K words by 16 bits that supports
an asynchronous memory interface. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life^® (MoBL^®) in
portable applications such as cellular telephones. The device
can be put into standby mode reducing power consumption by
more than 99% when deselected using CE LOW, CE₂ HIGH
or both BHE and BLE are HIGH. The input/output pins (I/O₀
through I/O₁₅) are placed in a high-impedance state when:
deselected (CE HIGH, CE₂ LOW OE is deasserted HIGH), or
during a write operation (Chip Enabled and Write Enable WE
LOW). The device also has an automatic power-down feature
that significantly reduces power consumption by 99% when
addresses are not toggling even when the chip is selected
(Chip Enable CE LOW, CE₂ HIGH and both BHE and BLE are
LOW). Reading from the device is accomplished by asserting
the Chip Enables (CE LOW and CE₂ HIGH) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH.
If Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins will appear on I/O₀ to
I/O₇. If Byte High Enable (BHE) is LOW, then data from
memory will appear on I/O₈ to I/O₁₅. See the Truth Table for a
complete description of read and write modes
Logic Block Diagram
DATA IN DRIVERS
A₁₀
A₉
A₈
A₇
A₆
512K x 16
A₅
A₄
RAM Array
A₃
1T
A₂
A₁
A₀
I/O₀–I/O₇
I/O₈–I/O₁₅
COLUMN DECODER
Power -Down
Circuit
BHE
WE
CE₂
CE
OE
BLE
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress .com.
WeidaSemiconductor, Inc.
38-14026
Revised August 2003