SIA778DJ Datasheet, PDF (9/12 Pages) Vishay Siliconix – N-Channel 12 V and 20 V (D-S) MOSFETs

New Product
SiA778DJ
Vishay Siliconix
CHANNEL 2 TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
1.7
10
1.6
1.5
V_GS = 4.5 V, 2.5 V, 1.8 V; I_D = 1.6 A
1.4
1
1.3
1.2
1.1
V_GS = 1.5 V; I_D = 0.4 A
T_J = 150 °C
T_J = 25 °C
0.1
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Normalized On-Resistance vs. Junction Temperature
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
8
I_D = 1.6 A
0.8
6
0.6
0.4
T_J = 125 °C
0.2
T_J = 25 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.9
0.8
4
2
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
10
Limited by R_DS(on)*
100 µs
0.7
I_D = 250 µA
0.6
0.5
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
1
1 ms
10 ms
100 ms
0.1
1 s, 10 s
DC
T_A = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65669
S10-0046-Rev. A, 11-Jan-10
www.vishay.com
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