SIA778DJ Datasheet, PDF (5/12 Pages) Vishay Siliconix – N-Channel 12 V and 20 V (D-S) MOSFETs

New Product
SiA778DJ
Vishay Siliconix
CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.08
0.07
T_J = 150 °C
10
T_J = 25 °C
1
0.06
0.05
0.04
0.03
0.02
I_D = 2 A; T_J = 125 °C
I_D = 5 A; T_J = 125 °C
I_D = 5 A;
T_J = 25 °C
I_D = 2 A; T_J = 25 °C
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.8
20
0.7
15
0.6
I_D = 250 µA
0.5
10
0.4
5
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0.001 0.01
0.1
1
10
100 1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
Limited by R_DS(on)*
10
100 µs
1
T_A = 25 °C
Single Pulse
0.1
1 ms
10 ms
100 ms, 1 s
10 s, DC
BVDSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65669
S10-0046-Rev. A, 11-Jan-10
www.vishay.com
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