SIA778DJ Datasheet, PDF (10/12 Pages) Vishay Siliconix – N-Channel 12 V and 20 V (D-S) MOSFETs

New Product
SiA778DJ
Vishay Siliconix
CHANNEL 2 TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
4
0.9
3
2
Package Limited
1
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
0.8
0.7
I_D = 250 µA
0.6
0.5
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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10
Document Number: 65669
S10-0046-Rev. A, 11-Jan-10