SIA778DJ Datasheet, PDF (2/12 Pages) Vishay Siliconix – N-Channel 12 V and 20 V (D-S) MOSFETs

SiA778DJ
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
V_GS = 0 V, I_D = 250 µA
V_DS Temperature Coefficient
ΔV_DS/T_J
I_D = 250 µA
I_D = 250 µA
V_GS(th) Temperature Coefficient
ΔV_GS(th)/T_J
I_D = 250 µA
I_D = 250 µA
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 8 V
V_DS = 0 V, V_GS = ± 6 V
V_DS = 12 V, V_GS = 0 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 20 V, V_GS = 0 V
V_DS = 12 V, V_GS = 0 V, T_J = 55 °C
V_DS = 20 V, V_GS = 0 V, T_J = 55 °C
On-State Drain Current^b
I_D(on)
V_DS ≥ 5 V, V_GS = 4.5 V
V_DS ≥ 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 5 A
V_GS = 4.5 V, I_D = 1.6 A
V_GS = 2.5 V, I_D = 4.6 A
Drain-Source On-State Resistance^b
R_DS(on)
V_GS = 2.5 V, I_D = 1.5 A
V_GS = 1.8 V, I_D = 4.1 A
V_GS = 1.8 V, I_D = 1.3 A
V_GS = 1.5 V, I_D = 2 A
V_GS = 1.5 V, I_D = 0.3 A
Forward Transconductance^b
g_fs
V_DS = 6 V, I_D = 5 A
V_DS = 10 V, I_D = 1.6 A
Dynamic^a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
Channel 1
V_DS = 6 V, V_GS = 0 V, f = 1 MHz
V_DS = 6 V, V_GS = 8 V, I_D = 6.5 A
Total Gate Charge
Q_g
V_DS = 10 V, V_GS = 5 V, I_D = 1.7 A
Gate-Source Charge
Gate-Drain Charge
Channel 1
V_DS = 6 V, V_GS = 4.5 V, I_D = 6.5 A
Q_gs
Channel 2
Q_gd
V_DS = 10 V, V_GS = 4.5 V, I_D = 1.7 A
Gate Resistance
R_g
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
f = 1 MHz
Min. Typ. Max. Unit
Ch-1 12
V
Ch-2 20
Ch-1
12
Ch-2
Ch-1
21
- 2.5
mV/°C
Ch-2
- 2.3
Ch-1 0.4
Ch-2 0.4
1
V
1
Ch-1
± 100 nA
Ch-2
1
mA
Ch-1
1
Ch-2
Ch-1
1
µA
10
Ch-2
10
Ch-1 15
A
Ch-2 4
Ch-1
0.024 0.029
Ch-2
0.183 0.225
Ch-1
0.028 0.034
Ch-2
Ch-1
0.220 0.270
Ω
0.032 0.044
Ch-2
0.275 0.345
Ch-1
0.042 0.065
Ch-2
0.320 0.960
Ch-1
21
S
Ch-2
3.5
Ch-1
500
Ch-1
160
pF
Ch-1
100
Ch-1
9.7
15
Ch-2
1.3 2.2
Ch-1
5.6 8.5
Ch-2
Ch-1
1.1
1.7
nC
0.72
Ch-2
0.2
Ch-1
0.74
Ch-2
0.1
Ch-1 0.7 3.5
7
Ω
Ch-2 40 200 400
www.vishay.com
2
Document Number: 65669
S10-0046-Rev. A, 11-Jan-10