SIA533EDJ Datasheet, PDF (9/14 Pages) Vishay Siliconix – N- and P-Channel 12-V (D-S) MOSFET

New Product
SiA533EDJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
1.5
I_D = 4.7 A
6
V_DS = 6 V
4
V_DS = 3 V
2
V_DS = 9.6 V
1.4
1.3
V_GS = 2.5 V, 4.5 V, I_D = 3.6 A
1.2
V_GS = 1.5 V, 1.8 V
1.1
I_D = 1 A
1.0
0.9
0.8
0
0
3
6
9
12
15
0.7
- 50 - 25 0 25 50 75 100 125 150
Q_g - Total Gate Charge (nC)
Gate Charge
100
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.20
0.16
I_D = 3.6 A, 125 °C
I_D = 3.6 A, 25 °C
10
T_J = 150 °C
T_J = 25 °C
1
0.12
0.08
0.04
I_D = 1 A, 125 °C
I_D = 1 A, 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.85
0.80
I_D = 250 µA
0.75
0.70
0.65
0.60
0.55
0.50
0.45
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Threshold Voltage
0.00
0.0
1.0
2.0
3.0
4.0
5.0
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10
100 1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
Document Number: 65706
S10-0214-Rev. A, 25-Jan-10
www.vishay.com
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