SIA533EDJ Datasheet, PDF (4/14 Pages) Vishay Siliconix – N- and P-Channel 12-V (D-S) MOSFET

New Product
SiA533EDJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.5
10^-2
2.0
T_J = 25 °C
1.5
1.0
0.5
0
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
10^-3
10^-4
10^-5
10^-6
10^-7
10^-8
10^-9
10^-10
0
T_J = 150 °C
T_J = 25 °C
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
20
10
V_GS = 5 V thru 2 V
16
8
12
V_GS = 1.5 V
8
4
V_GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.08
0.07
0.06
V_GS = 1.5 V
0.05
0.04
0.03
0.02
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.01
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
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4
6
T_C = 125 °C
4
T_C = 25 °C
2
T_C = - 55 °C
0
0.0
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
800
600
C_iss
400
C_oss
200
C_rss
0
0
3
6
9
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 65706
S10-0214-Rev. A, 25-Jan-10