SIA533EDJ Datasheet, PDF (8/14 Pages) Vishay Siliconix – N- and P-Channel 12-V (D-S) MOSFET

New Product
SiA533EDJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
10^-1
10^-2
2.5
10^-3
2.0
10^-4
10^-5
1.5
10^-6
1.0
T_J = 25 °C
0.5
0.0
0.0
4.0
8.0
12.0
16.0
10^-7
10^-8
10^-9
10^-10
0.0
4.0
T_J = 150 °C
T_J = 25 °C
8.0
12.0
16.0
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
15
10
V_GS = 5 V thru 2 V
12
8
9
V_GS = 2 V
6
3
0
0.0
0.20
0.16
V_GS = 1.5 V
V_GS = 1 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
V_GS = 1.5 V
V_GS = 1.8 V
0.12
0.08
0.04
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
6
T_C = 125 °C
4
T_C = 25 °C
2
T_C = - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
800
C_iss
600
400
200
0
0
C_oss
C_rss
3
6
9
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
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8
Document Number: 65706
S10-0214-Rev. A, 25-Jan-10