SIA533EDJ Datasheet, PDF (1/14 Pages) Vishay Siliconix – N- and P-Channel 12-V (D-S) MOSFET

New Product
SiA533EDJ
Vishay Siliconix
N- and P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.034 at V_GS = 4.5 V
0.040 at V_GS = 2.5 V
N-Channel 12
0.050 at V_GS = 1.8 V
0.070 at V_GS = 1.5 V
0.059 at V_GS = - 4.5 V
P-Channel
0.081at V_GS = - 2.5 V
- 12
0.115 at V_GS = - 1.8 V
0.215 at V_GS = - 1.5 V
I_D (A)
4.5^a
4.5^a
4.5^a
4.5^a
- 4.5^a
- 4.5^a
- 4.5^a
- 1.5
Q_g (Typ.)
5.6 nC
7.8 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs
• Typical ESD Protection: N-Channel 1500 V
P-Channel 1000 V
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Converters
PowerPAK^® SC-70-6 Dual
1
S1
D₁
D1
6
G2
5
2.05 mm S₂
4
2
G₁
D₂
3
D₂
2.05 mm
Marking Code
Part # code
EHX
XXX
Lot Traceability
and Date code
Ordering Information: SiA533EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D₁
S₂
G₁
G₂
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
V_DS
12
- 12
V
V_GS
±8
T_C = 25 °C
4.5^a
- 4.5^a
T_C = 70 °C
T_A = 25 °C
I_D
4.5^a
4.5^{a, b, c}
- 4.5^a
- 4.5^{a, b, c}
T_A = 70 °C
4.5^{a, b, c}
- 3.7^{b, c}
A
Pulsed Drain Current
Source Drain Current Diode Current
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
T_C = 25 °C
20
4.5^a
1.6^{b, c}
7.8
- 15
- 4.5^a
- 1.6^{b, c}
7.8
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
5
1.9^{b, c}
5
1.9^{b, c}
W
T_A = 70 °C
1.2^{b, c}
1.2^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
°C
260
Document Number: 65706
S10-0214-Rev. A, 25-Jan-10
www.vishay.com
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