SIA533EDJ Datasheet, PDF (2/14 Pages) Vishay Siliconix – N- and P-Channel 12-V (D-S) MOSFET

SiA533EDJ
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambient^{b, f}
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
R_thJA
R_thJC
52
65
52
65
12.5
16
12.5
16
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate Threshold Voltage
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
V_GS = 0 V, I_D = 250 µA
V_GS = 0 V, I_D = - 250 µA
I_D = 250 µA
I_D = - 250 µA
I_D = 250 µA
I_D = - 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = - 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 4.5 V
V_DS = 0 V, V_GS = ± 8 V
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
I_DSS
I_D(on)
R_DS(on)
g_fs
V_DS = 12 V, V_GS = 0 V
V_DS = - 12 V, V_GS = 0 V
V_DS = 12 V, V_GS = 0 V, T_J = 55 °C
V_DS = - 12 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ 5 V, V_GS = 4.5 V
V_DS ≤ - 5 V, V_GS = - 4.5 V
V_GS = 4.5 V, I_D = 4.6 A
V_GS = - 4.5 V, I_D = - 3.6 A
V_GS = 2.5 V, I_D = 4.2 A
V_GS = - 2.5 V, I_D = - 3.1 A
V_GS = 1.8 V, I_D = 3.8 A
V_GS = - 1.8 V, I_D = - 2.6 A
V_GS = 1.5 V, I_D = 1.5 A
V_GS = - 1.5 V, I_D = - 0.5 A
V_DS = 6 V, I_D = 4.6 A
V_DS = - 6 V, I_D = - 3.6 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
N-Channel
V_DS = 6 V, V_GS = 0 V, f = 1 MHz
P-Channel
V_DS = - 6 V, V_GS = 0 V, f = 1 MHz
Min. Typ. Max. Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
12
- 12
0.4
- 0.4
10
- 10
V
19
- 5.7
- 2.7
1.7
mV/°C
1.0
V
- 1.0
± 0.5
± 0.5
±5
±5
µA
1
-1
10
- 10
A
0.028 0.034
0.048 0.059
0.032 0.040
0.066 0.081
Ω
0.038 0.050
0.093 0.115
0.045 0.070
0.120 0.215
21
S
11
420
545
100
pF
192
62
175
www.vishay.com
2
Document Number: 65706
S10-0214-Rev. A, 25-Jan-10