SI7980DP Datasheet, PDF (9/18 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

Si7980DP
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
0.08
10
T_J = 25 °C
0.06
I_D = 5 A
T_J = 150 °C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10^-1
10^-2
10-3
V_DS = 20 V
V_DS = 15 V
V_DS = 10 V
0.04
T_J = 125 °C
0.02
T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
70
56
42
10-4
28
10^-5
14
10^-6
0
25
50
75
100 125 150
T_J - Junction Temperature (°C)
Reverse Current (Schottky)
100
Limited by R_DS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1 ms
1
10 ms
100 ms
1s
10 s
0.1
DC
T_A = 25 °C
Single Pulse
BVDSS
Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68391
S-83039-Rev. C, 29-Dec-08
www.vishay.com
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