SI7980DP Datasheet, PDF (4/18 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

Si7980DP
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
5
V_GS = 10 thru 4 V
24
4
18
3
V_GS = 3 V
T_C = 125 °C
12
2
6
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.026
0.024
0.022
V_GS = 4.5 V
1
T_C = 25 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-SourceVoltage (V)
Transfer Characteristics
1300
C_iss
1040
780
0.020
V_GS = 10 V
0.018
0.016
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 5 A
8
V_DS = 10 V
6
V_DS = 5 V
V_DS = 15 V
4
2
520
C_oss
260
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 5 A
1.5
1.3
V_GS =4.5 V
1.1
V_GS =10V
0.9
0
0
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4
4
8
12
16
20
Q_g - TotalGateCharge(nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68391
S-83039-Rev. C, 29-Dec-08