SI7980DP Datasheet, PDF (2/18 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

Si7980DP
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, b}
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJC
Channel-1
Typ. Max.
32
40
5.0
6.3
Channel-2
Typ. Max.
30
36
4.5
5.7
Unit
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
V_GS = 0 V, I_D = 1 mA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
ΔV_DS/T_J
ΔV_GS(th)/T_J
I_D = 250 µA
I_D = 250 µA
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = 1 mA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 16 V
V_DS = 0 V, V_GS = ± 16 V
V_DS = 20 V, V_GS = 0 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 100 °C
V_DS = 20 V, V_GS = 0 V, T_J = 100 °C
On-State Drain Current^d
I_D(on)
V_DS = 5 V, V_GS = 10 V
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 5 A
Drain-Source On-State Resistance^d
R_DS(on)
V_GS = 10 V, I_D = 5 A
V_GS = 4.5 V, I_D = 4 A
V_GS = 4.5 V, I_D = 4 A
Forward Transconductance^d
g_fs
V_DS = 15 V, I_D = 5 A
V_DS = 15 V, I_D = 5 A
Dynamic^c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
Channel-1
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
Channel-2
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 88 °C/W (Channel-1) and 83 °C/W (Channel-2).
c. Guaranteed by design, not subject to production testing.
d. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Min. ^Typ.c Max. Unit
Ch-1 20
V
Ch-2 20
Ch-1
Ch-1
22
mV/°C
-5
Ch-1 1
Ch-2 1.4
2.5
V
2.8
Ch-1
Ch-2
100
nA
100
Ch-1
0.001
Ch-2
Ch-1
0.05 0.5
mA
0.025
Ch-2
3
15
Ch-1 10
A
Ch-2 10
Ch-1
0.018 0.022
Ch-2
Ch-1
0.012 0.015
Ω
0.020 0.025
Ch-2
0.015 0.019
Ch-1
40
S
Ch-2
47
Ch-1
1010
Ch-2
1370
Ch-1
220
pF
Ch-2
320
Ch-1
100
Ch-2
120
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Document Number: 68391
S-83039-Rev. C, 29-Dec-08