SI7980DP Datasheet, PDF (8/18 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

Si7980DP
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
5
V_GS = 10 thru 4 V
24
4
18
V_GS = 3 V
12
3
T_C = 125 °C
2
6
0
0.0
0.6
1.2
1.8
2.4
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.020
0.018
0.016
V_GS = 4.5 V
1
T_C = 25 °C
0
0
1
2
T_C = - 55 °C
3
4
5
V_GS - Gate-to-SourceVoltage(V)
Transfer Characteristics
1700
C_iss
1360
1020
0.014
0.012
V_GS = 10 V
0.010
0
6
12
18
24
30
I_D - DrainCurrent(A)
On-Resistance vs. Drain Current
10
I_D = 5 A
8
V_DS = 10 V
6
V_DS = 5 V
V_DS = 15 V
4
2
680
C_oss
340
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 5 A
1.5
V_GS = 4.5 V
1.3
1.1
V_GS = 10 V
0.9
0
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
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8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - JunctionTemperature(°C)
On-Resistance vs. Junction Temperature
Document Number: 68391
S-83039-Rev. C, 29-Dec-08