 English |
|
|
|
|
|
|
|
| SI5913DC Datasheet, PDF (9/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode | |||
| |||
| ◁ |
New Product
SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Si5913DC
Vishay Siliconix
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 105 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?68920.
Document Number: 68920
S-82298-Rev. A, 22-Sep-08
www.vishay.com
9
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese