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| SI5913DC Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode | |||
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New Product
Si5913DC
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
0.084 at VGS = - 10 V
0.108 at VGS = - 4.5 V
0.175 at VGS = - 2.5 V
ID (A)a
- 4f
- 4f
- 3.5
Qg (Typ.)
4 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
20
0.5 at 1 A
IF (A)a
2
FEATURES
⢠LITTLE FOOT® Plus Schottky Power MOSFET
APPLICATIONS
⢠HDD
- DC/DC Converter
⢠Asynchronous Rectification
RoHS
COMPLIANT
1206-8 ChipFET
1
A
K
K
A
S
D
G
D
Marking Code
DJ XX
Lot Traceability
and Date Code
Part # Code
S
A
G
Bottom View
D
K
Ordering Information: Si5913DC-T1-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
VDS
- 20
Reverse Voltage (Schottky)
VKA
20
V
Gate-Source Voltage (MOSFET)
VGS
± 12
TC = 25 °C
- 4f
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
ID
- 4f
- 3.7b, c
TA = 70 °C
- 2.9b, c
Pulsed Drain Current (MOSFET)
IDM
- 15
A
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
TC = 25 °C
TA = 25 °C
IS
IF
- 2.6
- 1.4b, c
2b
Pulsed Forward Current (Schottky)
IFM
5
TC = 25 °C
3.1
Maximum Power Dissipation (MOSFET)
TC = 70 °C
TA = 25 °C
2.0
1.7b, c
TA = 70 °C
TC = 25 °C
PD
1.1b, c
3.1
W
Maximum Power Dissipation (Schottky)
TC = 70 °C
TA = 25 °C
2.0
1.3b, c
TA = 70 °C
0.8b, c
Operating Junction and Storage Temperature Range
Soldering Recommendation (Peak Temperature)g, h
TJ, Tstg
- 55 to 150
260
°C
Document Number: 68920
S-82298-Rev. A, 22-Sep-08
www.vishay.com
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