SI5913DC Datasheet, PDF (8/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

Si5913DC
Vishay Siliconix
New Product
SCHOTTKY TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
10^-1
10
10^-2
10^-3
10^-4
10^-5
10^-6
10^-7
V_R = 20 V
V_R = 15 V
V_R = 10 V
T_J = 150 °C
1
0.1
0.01
T_J = 25 °C
10^-8
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
250
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage
20
200
16
150
12
100
8
50
4
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
0
10^-4 10^-3
10^-2
10^-1
1
10
100
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
8
Document Number: 68920
S-82298-Rev. A, 22-Sep-08