SI5913DC Datasheet, PDF (4/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

Si5913DC
Vishay Siliconix
New Product
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
15
2.0
V_GS = 10 thru 4 V
12
1.6
9
V_GS = 3 V
1.2
T_C = - 55 °C
6
3
V_GS = 2 V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.20
V_GS = 2.5 V
0.16
0.12
0.08
0.04
V_GS = 4.5 V
V_GS = 10 V
0.00
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 3.7 A
8
V_DS = 10 V
6
V_DS = 16 V
4
2
0.8
T_C = 25 °C
0.4
T_C = 125 °C
0.0
0.0
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
600
500
C_iss
400
300
200
C_oss
100
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
V_GS = 10 V, I_D = 3.7 A
1.3
V_GS = 4.5 V, I_D = 3.2 A
1.1
0.9
0
0.0
1.5
3.0
4.5
6.0
7.5
9.0
Q_g - Total Gate Charge (nC)
Gate Charge
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4
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J -- Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68920
S-82298-Rev. A, 22-Sep-08